STD4N62K3

Vgs(th) (Max) @ Id:	4.5V @ 50µA
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	DPAK
Mounting Type:	Surface Mount
Operating Temperature:	150°C (TJ)
Power Dissipation (Max):	70W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	450pF @ 50V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	14nC @ 10V
Series:	SuperMESH3™
Rds On (Max) @ Id, Vgs:	1.95 Ohm @ 1.9A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	3.8A (Tc)
Drain to Source Voltage (Vdss):	620V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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Introduction

The STD4N62K3 is a N-channel Enhancement-mode Field-Effect Transistor (FET). The device consists of a source connection, a drain connection, and an insulated gate. The STD4N62K3 uses N-channel MOSFET technology to achieve high current and voltage ratings while keeping power losses to low levels. This makes the device suitable for high power switching and general power management when used in a wide variety of applications.

General Principles of Operation

As with all FETs, the STD4N62K3 utilizes a three-terminal arrangement to control electrical current. The source terminal connects to the voltage ground, the drain terminal connects to the load, and the gate terminal connects to the external control voltage. When the load is in an “on” state, the drain current is modulated by the external control voltage. By adjusting the control voltage, the drain current can be increased and decreased, allowing for precise power management from the load.The STD4N62K3 also utilizes an insulated gate, which prevents the drain and source current from passing through the gate, which increases the device’s efficiency and power loss reduction.

Features

The STD4N62K3 offers a wide range of unique features that make it well suited to a variety of applications. It features high current carrying capacity (on-state current of 5A, peak current of 9A), low on-state resistance (RDSOn of 4.5ohm), and high dV/dt due to its thick N-channel MOSFET structure. All these features combine to make the STD4N62K3 an ideal choice for high current applications such as DC-DC converters, motor speed control, and switching power supplies.

Applications

Due to its wide array of features, the STD4N62K3 can be used in a variety of applications. It is commonly used in DC-DC converters as a low voltage switch for power management. It can also be used in motor speed control applications due to its high dV/dt performance and low on-state resistance. Additionally, the device can be used for high current switching applications, such as those found in switching power supplies.

Conclusion

The STD4N62K3 is an N-channel Enhancement-mode Field-Effect Transistor (FET) that is well suited to a variety of applications due to its wide array of features. It features high current carrying capacity, low on-state resistance, and high dV/dt due to its thick N-channel MOSFET structure, all of which make it an ideal choice for high current applications such as DC-DC converters, motor speed control, and switching power supplies.

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