STF10P6F6 Allicdata Electronics
Allicdata Part #:

497-13831-5-ND

Manufacturer Part#:

STF10P6F6

Price: $ 0.32
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET P-CH 60V 10A TO-220FP
More Detail: P-Channel 60V 10A (Tc) 20W (Tc) Through Hole TO-22...
DataSheet: STF10P6F6 datasheetSTF10P6F6 Datasheet/PDF
Quantity: 1000
2000 +: $ 0.29009
Stock 1000Can Ship Immediately
$ 0.32
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220FP
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 20W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 48V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 6.4nC @ 10V
Series: DeepGATE™, STripFET™ VI
Rds On (Max) @ Id, Vgs: 160 mOhm @ 5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tube 
Description

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An STF10P6F6 is a single-channel enhancement-mode vertical MOSFET (metal–oxide–semiconductor field-effect transistor) of power MOSFETs. It is used in a wide range of applications including power supplies, motor drivers, and amplifiers. In this article, the field of applications and working principles of the STF10P6F6 will be discussed in detail.

Applications

Due to the increased demand for high current flow in a wide range of applications, the STF10P6F6 is often used for power Mosfet applications. The device is available in a TO220 package, allowing for easy interfacing in many applications. It is often used in power circuits, such as switching DC-DC converters, motor controllers, high-power audio amplifiers, and other high-power applications. It is also well-suited for surge loads up to 20A.

The STF10P6F6 can also be used in other applications, including logic level paMS, low-voltage AC-DC converters, low-voltage power supplies, and load switching. It is not limited to power devices and can be used in any application that requires a low on-resistance MOSFET. Due to its low on-resistance, it can be used in low-frequency signal processing applications and as a low-side switch.

Working Principle

At the heart of the STF10P6F6 is a MOSFET. A MOSFET (metal–oxide–semiconductor field-effect transistor) is a type of field-effect transistor (FET). It is made up of two channels: the source, which supplies the input signal and the drain which takes the output signal. When a voltage is applied to the gate, it creates an electric field which can either increase or decrease the conductivity of the channel between the source and the drain, thus controlling the flow of current. This is known as the enhancement-mode operation of the MOSFET, which is used in the STF10P6F6.

The STF10P6F6 is composed of two components, the main transistor and the integrated driver circuit. The transistor consists of a high-voltage, high-current field-oxide insulated-gate bipolar transistor (FET) and a low-voltage, low-current SOT-92 MOSFET. The integrated driver circuit is responsible for providing a controlled gate voltage to the FET. This allows for the precise and reliable control of the transistor. The driver circuit is connected to the power input, allowing it to be powered from any source, including a standard AC adapter.

The STF10P6F6’s maximum current rating per channel is 20A, which makes it well-suited for applications that require high current flow. The device also has a low on-resistance, making it ideal for low-power applications. Additionally, the device features a temperature-compensated shutoff mode which allows for precise control of the current output.

Conclusion

The STF10P6F6 is a single-channel enhancement-mode vertical MOSFET of power MOSFETs. It is available in a TO220 package and is often used in a wide range of applications, including power supplies, motor drivers, and amplifiers. The device consists of two components, the main transistor and the integrated driver circuit. The operating principle includes the creation of an electric field by the applied voltage to the gate, which controls the conductivity of the channel. The device has a low on-resistance and can handle surge loads up to 20A. Thus, the STF10P6F6 is an ideal device for a variety of power applications.

The specific data is subject to PDF, and the above content is for reference

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