STF19NM65N

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The STF19NM65N is a N-channel enhancement-mode power MOSFET that belongs to the family of single transistors. This transistor is designed for high voltage, high speed power switching as well as for general purpose applications. The STF19NM65N is composed of two parts, a MOSFET gate and a P-channel depletion-mode load. The MOSFET is an ideal choice for high voltage switching applications, offering higher power efficiency and better power density when compared to other N-channel MOSFETs.

The STF19NM65N features a remarkably low gate threshold voltage of only 0.5V and a fast turn-on drain-source time of 2.9ns. This MOSFET is able to withstand an absolute gate voltage of -20V and can operate at temperatures of up to 175°C. The ON-resistance of this transistor is 132mΩ, making it well-suited for applications involving high current switching. Furthermore, the STF19NM65N is able to provide a power dissipation of 75.3W and an avalanche energy rating of 256mJ under stable conditions.

The STF19NM65N is widely used in power management for applications such as resonant half-bridge inverters, motor drives, DC/DC converters and power supplies. In addition, this MOSFET is beneficial for systems that require a high-speed device, such as telecom and data processing circuits.

The working principle of the STF19NM65N can be considered to be four-fold: the MOSFET gate is configured to control the flow of electrons, like a regular switch. This action can be triggered via an applied voltage. When a voltage is applied to the gate, the MOSFET enters, what is known as, the saturation mode. In this mode, the gate-to-source voltage, or VGS, becomes very low, and the resulting current is limited to the MOSFET\'s load current. When the voltage is removed from the gate, the transistor enters the cut-off mode and it serves as an open switch, no longer passing current.

The STF19NM65N is also designed to reduce power dissipation due to its built-in EPAD (external pre-biased avalanche diode). This diode contributes to the transistor\'s protection from over-voltage as well as frequency modulation. This is because the diode acts like a limiter, slowing down the current flowing through the MOSFET while still allowing it to remain in an open state.

The STF19NM65N MOSFET is a high-performance, high-voltage switch that is suitable for a wide range of applications. It features an exceptionally low gate threshold voltage and can offer excellent switching performance with a maximum operating temperature of 175°C. Its P-channel depletion-mode load also provides advanced protection against over-voltages and frequency modulation, allowing the device to remain in an open state while still managing to maintain low power dissipation. Therefore, the STF19NM65N is an excellent choice for many kinds of power management applications.

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