| Allicdata Part #: | 497-12581-5-ND |
| Manufacturer Part#: |
STF5N52K3 |
| Price: | $ 0.76 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | STMicroelectronics |
| Short Description: | MOSFET N-CH 525V 4.4A TO-220FP |
| More Detail: | N-Channel 525V 4.4A (Tc) 25W (Tc) Through Hole TO-... |
| DataSheet: | STF5N52K3 Datasheet/PDF |
| Quantity: | 783 |
| 1 +: | $ 0.76000 |
| 10 +: | $ 0.73720 |
| 100 +: | $ 0.72200 |
| 1000 +: | $ 0.70680 |
| 10000 +: | $ 0.68400 |
| Vgs(th) (Max) @ Id: | 4.5V @ 50µA |
| Package / Case: | TO-220-3 Full Pack |
| Supplier Device Package: | TO-220FP |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 25W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 545pF @ 100V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 17nC @ 10V |
| Series: | SuperMESH3™ |
| Rds On (Max) @ Id, Vgs: | 1.5 Ohm @ 2.2A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 4.4A (Tc) |
| Drain to Source Voltage (Vdss): | 525V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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The STF5N52K3 is a type of N-channel MOSFET, or a metal–oxide–semiconductor field effect transistor, used to control current flow in higher-powered electronic devices. Most often, STF5N52K3 devices are used in switching applications, amplifying applications, and current sensing. The fields in which these MOSFETs can be applied range from lightweight consumer appliances to heavy-duty industrial designs.
MOSFETs are able to control current flow with higher accuracy than traditional transistors or vacuum tubes, allowing for more efficient and reliable power control with the same amount of current. Furthermore, the STF5N52K3 specifically is designed for high voltage operation, making them suitable for almost any application.
Specifically speaking, the STF5N52K3 is a logic-level N-channel MOSFET, meaning it has a low “on” resistance. By combining low “on” resistance with low voltage control, the STF5N52K3 is able to minimize “on” time, allowing it to operate more efficiently than many other MOSFETs. The STF5N52K3 also has a low drain to source capacitance, making it suitable for high frequency applications.
The STF5N52K3 is a voltage voltage-driven MOSFET, meaning it needs a higher voltage applied across its control gate in order to open. When the voltage is applied, it generates an electric field across the MOSFET channel, causing current to flow. Once the voltage is removed, the electric field dissipates, and the channel closes.
The STF5N52K3 has a maximum drain current of 0.4 Amps, and an R(on) of 29 mΩ. Its peak drain source voltage is 60V, and its gate to source voltage is -30 to +30V. Its threshold voltage, VGS(th), is 2V, meaning any voltage applied between 2 and 4.5V will cause the device to switch on. The STF5N52K3 also has a maximum switching time of 40ns, making it suitable for most high speed applications.
In summary, the STF5N52K3 is a logic-level N-channel MOSFET capable of controlling high voltage applications with low “on” resistance and low voltage control. It is suitable for use in switching and current sensing applications, and can operate at high frequency, making it a reliable and efficient power control device.
The specific data is subject to PDF, and the above content is for reference
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STF5N52K3 Datasheet/PDF