| Allicdata Part #: | 497-11325-5-ND |
| Manufacturer Part#: |
STFW60N65M5 |
| Price: | $ 11.05 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | STMicroelectronics |
| Short Description: | MOSFET N-CH TO-3PF/ISOWATT 218 |
| More Detail: | N-Channel 650V 46A (Tc) 79W (Tc) Through Hole ISOW... |
| DataSheet: |  STFW60N65M5 Datasheet/PDF |
| Quantity: | 282 |
| 1 +: | $ 10.04220 |
| 10 +: | $ 9.12870 |
| 100 +: | $ 7.75936 |
| Vgs(th) (Max) @ Id: | 5V @ 250µA |
| Package / Case: | ISOWATT218FX |
| Supplier Device Package: | ISOWATT-218FX |
| Mounting Type: | Through Hole |
| Operating Temperature: | 150°C (TJ) |
| Power Dissipation (Max): | 79W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 6810pF @ 100V |
| Vgs (Max): | ±25V |
| Gate Charge (Qg) (Max) @ Vgs: | 139nC @ 10V |
| Series: | MDmesh™ V |
| Rds On (Max) @ Id, Vgs: | 59 mOhm @ 23A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 46A (Tc) |
| Drain to Source Voltage (Vdss): | 650V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tube |
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The STFW60N65M5 is a standard N-Channel enhancement mode power field effect transistor (MOSFET) manufactured by STMicroelectronics. It is a versatile power switching device with a wide range of uses and applications.
The STFW60N65M5 is an advanced N-Channel MOSFET technology with high channel density and low on-resistance. Its exceptional switching characteristics make it suitable for a wide range of power management applications such as power switches for variable speed drives, solar power inverters, and high efficiency power supplies.
The STFW60N65M5 has a drain source voltage of 600V and a maximum drain current of 65A. It also has a typical thermal resistance of 1.2K/W and a total gate charge of 44nC. It comes in a TO-220 package and is suitable for surface mount and through-hole mounting.
The STFW60N65M5 is a vertical DMOS MOSFET, meaning that it has an isolated N-Channel enhancement mode MOSFET built on an insulated metal substrate, making it particularly suitable for high power applications. The vertical structure of the STFW60N65M5 provides superior thermal and switching performances over other MOSFET technologies, allowing for higher operating frequencies and higher efficiency.
The STFW60N65M5 has a maximum drain-source breakdown voltage of 600V and a maximum drain-source voltage of 300V. It also has a maximum drain current of 65A and a maximum forward gate current of 4.5A. The STFW60N65M5 can handle high surge power, up to 10ms pulses at 1.5x. Its maximum power dissipation is 340W.
The STFW60N65M5 operates in both an enhancement mode and a depletion mode. In enhancement mode, the device is turned on by a positive gate-source voltage. When the gate potential is increased, the device conducts more current and will increase the drain current up to its saturation limit. In depletion mode, the device is turned on by a negative gate-source voltage. When the gate voltage is decreased, the device will conduct less current and the drain current decreases proportionally to the gate voltage.
The STFW60N65M5 offers excellent dynamic characteristics with low gate charge and fast switching speeds. It also provides excellent noise immunity, offering the user reliable and interference free operation. The STFW60N65M5 is both thermally capable and stable, making it an excellent choice for applications that require both reliability and performance.
The STFW60N65M5 is a versatile MOSFET that is suitable for a wide range of power management applications. It is an ideal choice for switching circuits, power converters and power supplies. The device’s superior performance and reliability makes it an excellent choice for high power applications where performance and efficiency are critical.
The specific data is subject to PDF, and the above content is for reference
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