Allicdata Part #: | 497-15140-5-ND |
Manufacturer Part#: |
STGWT30H60DFB |
Price: | $ 2.35 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | IGBT 600V 60A 260W TO3PL |
More Detail: | IGBT Trench Field Stop 600V 60A 260W Through Hole ... |
DataSheet: | STGWT30H60DFB Datasheet/PDF |
Quantity: | 30 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
1 +: | $ 2.13570 |
10 +: | $ 1.91898 |
100 +: | $ 1.57242 |
500 +: | $ 1.33858 |
1000 +: | $ 1.12892 |
Power - Max: | 260W |
Supplier Device Package: | TO-3P |
Package / Case: | TO-3P-3, SC-65-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Reverse Recovery Time (trr): | 53ns |
Test Condition: | 400V, 30A, 10 Ohm, 15V |
Td (on/off) @ 25°C: | 37ns/146ns |
Gate Charge: | 149nC |
Input Type: | Standard |
Switching Energy: | 383µJ (on), 293µJ (off) |
Series: | -- |
Vce(on) (Max) @ Vge, Ic: | 2V @ 15V, 30A |
Current - Collector Pulsed (Icm): | 120A |
Current - Collector (Ic) (Max): | 60A |
Voltage - Collector Emitter Breakdown (Max): | 600V |
IGBT Type: | Trench Field Stop |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tube |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The STGWT30H60DFB transistor is a high-performance insulated gate bipolar transistor (IGBT) module, using the single chip configuration, manufactured by the STGWT company. It has excellent characteristics such as a low conduction loss, fast switching capability, low gate voltage drive requirement, low noise operation, high temperature thermal stability, and a low on state current.
The STGWT30H60DFB is ideal for use in applications where high power densities, low conduction losses, fast switching speeds and low noise are required. It is especially suitable for applications such as motor drives, power supplies, battery chargers, motor control, power electronics, electronic lighting systems, and industrial systems.
The main component of the STGWT30H60DFB is a single chip Insulated Gate Bipolar Transistor (IGBT) module. It is equipped with a free wheeling diode and a lossless circuit for operation in the management and output stages of the circuit. The single chip module has a low on state current and a high switching capability of up to 200A. Its gate is driven by a low voltage drive “on/off” pulse, which ensure reliable operation and protection even when subject to harsh environment.
The STGWT30H60DFB working principle can be described by the following values: on-state voltage drop Vf (V) = 0.95, on-state drain current ID (A) = 120A, gate-to-source turn-off voltage (V) = -10.8V, gate-to-drain turn-off voltage (V) = +1V, total dissipation power P = 57W.
The STGWT30H60DFB is a high-performance IGBT module characterized by a low on state voltage and a high speed switching capability of up to 200A. It is suitable for demanding applications requiring high power density, low conduction losses, fast switching speeds and low noise. The free wheeling diode, lossless circuit and low voltage drive “on/off” pulse ensures reliable operation and protection even when subject to adverse environmental conditions. Furthermore, its low on state current and high temperature thermal stability make it ideal for use in motor drives, power supplies, battery chargers, motor control, power electronics, electronic lighting systems and industrial systems.
The specific data is subject to PDF, and the above content is for reference
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