STGWT80V60F Allicdata Electronics
Allicdata Part #:

497-15142-5-ND

Manufacturer Part#:

STGWT80V60F

Price: $ 8.32
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: IGBT 600V 120A 469W TO-3P
More Detail: IGBT Trench Field Stop 600V 120A 469W Through Hole...
DataSheet: STGWT80V60F datasheetSTGWT80V60F Datasheet/PDF
Quantity: 221
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
1 +: $ 7.56000
10 +: $ 6.82668
100 +: $ 5.65186
500 +: $ 4.92156
Stock 221Can Ship Immediately
$ 8.32
Specifications
Series: --
Packaging: Tube 
Lead Free Status / RoHS Status: --
Part Status: Active
Moisture Sensitivity Level (MSL): --
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 120A
Current - Collector Pulsed (Icm): 240A
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 80A
Power - Max: 469W
Switching Energy: 1.8mJ (on), 1mJ (off)
Input Type: Standard
Gate Charge: 448nC
Td (on/off) @ 25°C: 60ns/220ns
Test Condition: 400V, 80A, 10 Ohm, 15V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Supplier Device Package: TO-3P
Description

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Transistors are important components in many electronics applications. They are used to amplify electrical signals, regulate power, and provide control and protection for different circuits. There are a variety of transistors and all have their own characteristics that make them suitable for different applications and purposes. IGBTs are a type of transistor, specifically a type of field effect transistor, that have special characteristics that make them incredibly useful in many circuit designs. An IGBT is composed of a few different components: a drain, gate, and source, as well as a few internal electrical components. One example of an IGBT is the STGWT80V60F. This article will provide an overview of the application field and working principle of the STGWT80V60F. The STGWT80V60F is an insulated gate bipolar transistor, also known as an IGBT. In a nutshell, an IGBT is a combination of a field effect transistor and a bipolar junction transistor, creating a transistor with low on-state voltage, high switching speed, and low gate currents. This transistor was specifically created for use in switching power supplies and motor drives. The particular characteristics of the STGWT80V60F make it ideal for those types of applications, as well as other applications. The STGWT80V60F is capable of switching over 8A at a low on-state voltage of just 0.8V, meaning it can convert AC/DC power with minimal energy losses. It has a low switching loss that allows it to switch frequencies up to 30kHz, making it suitable for high-frequency applications. This transistor also features a soft-turn-off feature, which allows for smooth switching and reduces the amount of electromagnetic interference that can occur during switching. The STGWT80V60F is able to achieve such high performance due to the fact that it is a field-effect transistor and a bipolar junction transistor combined into one. Field-effect transistors work by using electric charges to control the conductivity of the transistor. This is done by applying a voltage to the gate, which then attracts the electric charges and causes them to accumulate near the gate. When the gate voltage is increased, the electric charge accumulates near the gate and the current through the transistor increases. Bipolar junction transistors operate by using three layers of conducting material that can be controlled with electric charges. By controlling the electric charges, the conductivity of the transistor can be controlled as well. By combining a field effect transistor with a bipolar junction transistor, an IGBT is capable of controlling the conductivity of the device using electric charges, as well as controlling the electric potential across the device. In addition to its use in switching power supplies and motor drives, the STGWT80V60F can also be used in applications such as lighting control and photovoltaics. It can also be used in a wide variety of other applications due to its high performance, low on-state voltage, and low switching loss.Overall, the STGWT80V60F is an excellent choice for applications that require high performance and low on-state voltage. Its combined field-effect and bipolar junction transistor characteristics make it an ideal choice for those applications, as well as many others.

The specific data is subject to PDF, and the above content is for reference

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