STL75N8LF6 Allicdata Electronics
Allicdata Part #:

497-11252-2-ND

Manufacturer Part#:

STL75N8LF6

Price: $ 1.17
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 80V 75A POWERFLAT56
More Detail: N-Channel 80V 75A (Tc) 80W (Tc) Surface Mount Powe...
DataSheet: STL75N8LF6 datasheetSTL75N8LF6 Datasheet/PDF
Quantity: 1000
1 +: $ 1.17000
10 +: $ 1.13490
100 +: $ 1.11150
1000 +: $ 1.08810
10000 +: $ 1.05300
Stock 1000Can Ship Immediately
$ 1.17
Specifications
Vgs(th) (Max) @ Id: 1V @ 250µA
Package / Case: 8-PowerVDFN
Supplier Device Package: PowerFlat™ (5x6)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 80W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 6895pF @ 25V
Vgs (Max): +21V, -16V
Gate Charge (Qg) (Max) @ Vgs: 125nC @ 4.5V
Series: DeepGATE™, STripFET™ VI
Rds On (Max) @ Id, Vgs: 7.4 mOhm @ 9A, 10V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drain to Source Voltage (Vdss): 80V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The STL75N8LF6 is a power field effect transistor (FET) designed for automotive and high voltage applications. The device is a single N-channel enhancement-mode MOSFET featuring advanced power MOSFET DMOS technologies and a proprietary dynamic dV/dt optimized Trench structure. It offers low on-resistance, excellent avalanche energy and dV/dt robustness and an extremely fast switching capability. The device is designed for high frequency and high efficiency operation in a wide range of automotive and industrial applications.

Applications

The STL75N8LF6 is suitable for a wide range of automotive and industrial applications including:

  • High Efficiency Motor Drives
  • Switching Regulators
  • High Speed High Efficiency DC-DC converters
  • Power factor correction
  • Bridgeless Totem Pole PFCs
  • High Frequency DC/DC Converters with Synchronous Rectification
  • Three-Phase PFC circuits
  • High Speed AC/DC converters
  • Uninterrupted Power Supplies
  • Offline lamp ballast controllers
  • Telecommunication systems
  • Audio amplifier DC protection circuits

Features

  • Normal operating temperature range up to 175°C
  • High power dissipation of 153 W
    (at Tj=25°C)
  • Wettable Flank for Automatic Optical Inspection
  • Extremely fast switching frequency
  • Very low gate charge
  • Excellent avalanche energy and dV/dt robustness
  • Low on-resistance
  • Fully Pb-free package
  • Low output capacitance
  • Enhanced body diode
  • Polarity protection

Working Principle

The STL75N8LF6 is a single N-channel enhancement-mode MOSFET. The device is constructed using advanced power MOSFET technology and comprises an orderly arranged stack of P-type and N-type regions isolated by a use of a proprietary dynamic dV/dt optimized Trench structure. The N-channel MOSFET has a single drain connection at the bottom of the device, and a gate connection at the top. Two source connections at the sides of the device allow for the connection of a source terminal and a source guard terminal.

When the STL75N8LF6 is turned on, current can flow from the drain to the source. The device is designed for low on-resistance and for very fast switching performance. It has an extremely fast switching frequency and low input capacitance. In addition, the STL75N8LF6 has an enhanced body diode for fast recovery in applications with a reverse polarity voltage across the device. The device also features an excellent avalanche energy and dV/dt robustness.

The specific data is subject to PDF, and the above content is for reference

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