Allicdata Part #: | 497-11252-2-ND |
Manufacturer Part#: |
STL75N8LF6 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 80V 75A POWERFLAT56 |
More Detail: | N-Channel 80V 75A (Tc) 80W (Tc) Surface Mount Powe... |
DataSheet: | STL75N8LF6 Datasheet/PDF |
Quantity: | 1000 |
Series: | DeepGATE™, STripFET™ VI |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 80V |
Current - Continuous Drain (Id) @ 25°C: | 75A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 5V, 10V |
Rds On (Max) @ Id, Vgs: | 7.4 mOhm @ 9A, 10V |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 125nC @ 4.5V |
Vgs (Max): | +21V, -16V |
Input Capacitance (Ciss) (Max) @ Vds: | 6895pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 80W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | PowerFlat™ (5x6) |
Package / Case: | 8-PowerVDFN |
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The STL75N8LF6 is a power field effect transistor (FET) designed for automotive and high voltage applications. The device is a single N-channel enhancement-mode MOSFET featuring advanced power MOSFET DMOS technologies and a proprietary dynamic dV/dt optimized Trench structure. It offers low on-resistance, excellent avalanche energy and dV/dt robustness and an extremely fast switching capability. The device is designed for high frequency and high efficiency operation in a wide range of automotive and industrial applications.
Applications
The STL75N8LF6 is suitable for a wide range of automotive and industrial applications including:
- High Efficiency Motor Drives
- Switching Regulators
- High Speed High Efficiency DC-DC converters
- Power factor correction
- Bridgeless Totem Pole PFCs
- High Frequency DC/DC Converters with Synchronous Rectification
- Three-Phase PFC circuits
- High Speed AC/DC converters
- Uninterrupted Power Supplies
- Offline lamp ballast controllers
- Telecommunication systems
- Audio amplifier DC protection circuits
Features
- Normal operating temperature range up to 175°C
- High power dissipation of 153 W
(at Tj=25°C) - Wettable Flank for Automatic Optical Inspection
- Extremely fast switching frequency
- Very low gate charge
- Excellent avalanche energy and dV/dt robustness
- Low on-resistance
- Fully Pb-free package
- Low output capacitance
- Enhanced body diode
- Polarity protection
Working Principle
The STL75N8LF6 is a single N-channel enhancement-mode MOSFET. The device is constructed using advanced power MOSFET technology and comprises an orderly arranged stack of P-type and N-type regions isolated by a use of a proprietary dynamic dV/dt optimized Trench structure. The N-channel MOSFET has a single drain connection at the bottom of the device, and a gate connection at the top. Two source connections at the sides of the device allow for the connection of a source terminal and a source guard terminal.
When the STL75N8LF6 is turned on, current can flow from the drain to the source. The device is designed for low on-resistance and for very fast switching performance. It has an extremely fast switching frequency and low input capacitance. In addition, the STL75N8LF6 has an enhanced body diode for fast recovery in applications with a reverse polarity voltage across the device. The device also features an excellent avalanche energy and dV/dt robustness.
The specific data is subject to PDF, and the above content is for reference
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