STP11N65M5 Allicdata Electronics
Allicdata Part #:

497-13170-ND

Manufacturer Part#:

STP11N65M5

Price: $ 0.92
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N CH 650V 9A TO-220
More Detail: N-Channel 650V 9A (Tc) 85W (Tc) Through Hole TO-22...
DataSheet: STP11N65M5 datasheetSTP11N65M5 Datasheet/PDF
Quantity: 1000
1000 +: $ 0.84357
Stock 1000Can Ship Immediately
$ 0.92
Specifications
Vgs(th) (Max) @ Id: 5V @ 250µA
Package / Case: TO-220-3
Supplier Device Package: TO-220
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 85W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 644pF @ 100V
Vgs (Max): ±25V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Series: MDmesh™ V
Rds On (Max) @ Id, Vgs: 480 mOhm @ 4.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Drain to Source Voltage (Vdss): 650V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The STP11N65M5 is a brand of N-Channel metal oxide semiconductor field-effect transistors (MOSFETs) designed for use in high-current and high-temperature applications. Its name stands for ‘Synchronous Trench Power MOSFET’, which indicates the type of power MOSFETs used in the product. This semiconductor device, manufactured by STMicroelectronics, is suitable for a variety of high-performance applications in automotive, industrial, and consumer markets.

The STP11N65M5 offers superior low on-resistance ratings and power capabilities, making it highly suitable for applications involving switching, power management, or higher-power designs. The on-resistance ratings are determined based on the voltage applied to the gate terminal, and the on-resistance decreases as the voltage increases. The product also offers a nominal drain-source voltage of 100V, with a maximum of 110V. This feature makes it appropriate for various kinds of power control applications.

The STP11N65M5 has a number of features that make it suitable for various kinds of applications. First, it has high switching speed, allowing for higher efficiencies in power electronics applications. The device has low capacitance and gate charge, allowing for improved noise performance in electronic circuits. The low input capacitance also helps reduce the device’s switching time. In addition, the device has a low-leakage current, making it perfect for battery-powered applications.

The STP11N65M5 also has a number of applications in the automotive market. The device is suitable for brushless motor control, chargers, flyback converters, and other power supply designs. The product has over-voltage protection, a temperature-sensitive internal protective circuit, and thermal overload protection, which helps it operate safely in a wide variety of automotive conditions.

The device’s working principle is based on the MOSFET technology. In operation, the device uses a gate-source voltage to control the current flow between the source and drain terminals. When the voltage applied to the gate is higher than the source, the drain current is switched on. Conversely, when the gate voltage is lower than the source voltage, the drain current is switched off.

The STP11N65M5 is a reliable product with a wide range of applications and features that make it suitable for various kinds of high-powered applications. The product’s ability to handle high current and temperatures make it suitable for use in applications where high voltage and power are essential. Moreover, its low input capacitance ensures improved noise performance in electronic circuits, as well as faster switching times. Therefore, the STP11N65M5 is a highly useful device for a variety of applications in different markets.

The specific data is subject to PDF, and the above content is for reference

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