Allicdata Part #: | 497-13170-ND |
Manufacturer Part#: |
STP11N65M5 |
Price: | $ 0.92 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N CH 650V 9A TO-220 |
More Detail: | N-Channel 650V 9A (Tc) 85W (Tc) Through Hole TO-22... |
DataSheet: | STP11N65M5 Datasheet/PDF |
Quantity: | 1000 |
1000 +: | $ 0.84357 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220 |
Mounting Type: | Through Hole |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 85W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 644pF @ 100V |
Vgs (Max): | ±25V |
Gate Charge (Qg) (Max) @ Vgs: | 17nC @ 10V |
Series: | MDmesh™ V |
Rds On (Max) @ Id, Vgs: | 480 mOhm @ 4.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 9A (Tc) |
Drain to Source Voltage (Vdss): | 650V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The STP11N65M5 is a brand of N-Channel metal oxide semiconductor field-effect transistors (MOSFETs) designed for use in high-current and high-temperature applications. Its name stands for ‘Synchronous Trench Power MOSFET’, which indicates the type of power MOSFETs used in the product. This semiconductor device, manufactured by STMicroelectronics, is suitable for a variety of high-performance applications in automotive, industrial, and consumer markets.
The STP11N65M5 offers superior low on-resistance ratings and power capabilities, making it highly suitable for applications involving switching, power management, or higher-power designs. The on-resistance ratings are determined based on the voltage applied to the gate terminal, and the on-resistance decreases as the voltage increases. The product also offers a nominal drain-source voltage of 100V, with a maximum of 110V. This feature makes it appropriate for various kinds of power control applications.
The STP11N65M5 has a number of features that make it suitable for various kinds of applications. First, it has high switching speed, allowing for higher efficiencies in power electronics applications. The device has low capacitance and gate charge, allowing for improved noise performance in electronic circuits. The low input capacitance also helps reduce the device’s switching time. In addition, the device has a low-leakage current, making it perfect for battery-powered applications.
The STP11N65M5 also has a number of applications in the automotive market. The device is suitable for brushless motor control, chargers, flyback converters, and other power supply designs. The product has over-voltage protection, a temperature-sensitive internal protective circuit, and thermal overload protection, which helps it operate safely in a wide variety of automotive conditions.
The device’s working principle is based on the MOSFET technology. In operation, the device uses a gate-source voltage to control the current flow between the source and drain terminals. When the voltage applied to the gate is higher than the source, the drain current is switched on. Conversely, when the gate voltage is lower than the source voltage, the drain current is switched off.
The STP11N65M5 is a reliable product with a wide range of applications and features that make it suitable for various kinds of high-powered applications. The product’s ability to handle high current and temperatures make it suitable for use in applications where high voltage and power are essential. Moreover, its low input capacitance ensures improved noise performance in electronic circuits, as well as faster switching times. Therefore, the STP11N65M5 is a highly useful device for a variety of applications in different markets.
The specific data is subject to PDF, and the above content is for reference
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