| Allicdata Part #: | 497-12605-5-ND |
| Manufacturer Part#: |
STP13NK60ZFP |
| Price: | $ 3.24 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | STMicroelectronics |
| Short Description: | MOSFET N-CH 600V 13A TO-220FP |
| More Detail: | N-Channel 600V 13A (Tc) 35W (Tc) Through Hole TO-2... |
| DataSheet: | STP13NK60ZFP Datasheet/PDF |
| Quantity: | 659 |
| 1 +: | $ 3.24000 |
| 10 +: | $ 3.14280 |
| 100 +: | $ 3.07800 |
| 1000 +: | $ 3.01320 |
| 10000 +: | $ 2.91600 |
| Vgs(th) (Max) @ Id: | 4.5V @ 100µA |
| Package / Case: | TO-220-3 Full Pack |
| Supplier Device Package: | TO-220FP |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 35W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 2030pF @ 25V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 92nC @ 10V |
| Series: | SuperMESH™ |
| Rds On (Max) @ Id, Vgs: | 550 mOhm @ 4.5A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 13A (Tc) |
| Drain to Source Voltage (Vdss): | 600V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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The STP13NK60ZFP is a N-channel enhancement mode Field-Effect Transistor (FET) used for simple switching applications, specifically as a power switch for controlling currents up to 13A. Its robust construction and design make it a very reliable and widely used component for a number of different projects. This article will discuss the application field and working principle of the STP13NK60ZFP.
Features
The STP13NK60ZFP has the following features:
- Low drain-source on resistance: 3.2 ohms max. at 10 V
- Low input capacitance: 17 pF max. at 10V
- Improved Avalanche energy: 20 mJ max. @ 250V
- High drain-source breakdown voltage: 600V
Application Field
The STP13NK60ZFP is mainly used in power switching applications that require high currents, such as DC motor and solenoid control. It is also used in low-voltage control circuits, audio and visual signal processing, and other electronically switched applications. Furthermore, this transistor is known for its robustness and durability, making it suited for long-term and or harsh operation.
Working Principle
The STP13NK60ZFP is an N-channel FET, meaning that the component has a negative gate voltage with respect to its source. Unlike a bipolar junction transistor, which has three terminals, the FET has four, with the additional terminal being a gate. The gate is responsible for regulating the flow of current, which occurs by creating an electric field. When a voltage is applied to the gate, an electric field is created which then attracts electrons from the source and draws them towards the drain.
The amount of current that passes from source to drain is determined by the voltage present at the gate. The higher the voltage, the more current that is allowed to pass through the FET. Conversely, the lower the voltage, the less current will be allowed to pass. As a result, the FET acts like a switch that can be turned on and off by adjusting the voltage at the gate.
Conclusion
In conclusion, the STP13NK60ZFP is an N-channel enhancement mode Field-Effect Transistor that is used in a wide range of applications. Its features and robust design make it an ideal component for controlling high currents, both in the long and short terms. The STP13NK60ZFP also operates on the principle of an electric field created by a voltage applied to the gate, allowing current to be controlled or switched on or off as required.
The specific data is subject to PDF, and the above content is for reference
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STP13NK60ZFP Datasheet/PDF