STP23NM50N

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The STP23NM50N is a robust and reliable N-Channel MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) that offers strong performance and low power consumption in various applications. It is ideal for switching or voltage regulation in consumer electronics, automotive, computers, solar energy and general purpose applications. This type of transistor is available in surface mount and through-hole form factors.

The STP23NM50N is a single-channel MOSFET device based on the EPCOS TrenchMOS technology. This technology utilizes the concept of an insulated gate region coupled with a physical barrier between the active channels. The combination of these features provides strong levels of insulation characteristics, lower switching losses and support for larger current ratings with lower R_DS(on).

As a power MOSFET, the STP23NM50N operates on the principle of the field-effect. The gate-source region of this N-Channel MOSFET contains a wall of negatively charged electrons (the dielectric). Applying a positive voltage to the gate electrode causes the electrons to be attracted to the positive gate voltage and drawn away from the channel region between the source and the drain. This reduces the resistance of the channel, allowing current to flow.

The STP23NM50N has an R_DS(on) rating of 2.3Ω. It can switch up to an output current of 23A and performance a blocking voltage of 500V. It is built with a total gate charge (Q_g) of 11.2nC and a threshold voltage of 3.2V. The maximum operating junction temperature of this N-Channel MOSFET is 175°C.

In addition to its excellent performance, the STP23NM50N is also designed for low power consumption. It can handle low gate voltage in order to reduce overall power consumption during operation. The device is also designed to minimize the power loss caused by on-state resistance by minimizing the value of its R_DS(on). Furthermore, the device features low total gate charge (Q_g) and low input capacitance (Ciss) with excellent gate-argument resistance (Rg) for fast switching capability.

Overall, the STP23NM50N is an excellent choice for applications that require low power consumption and high performance in power management. This device is suitable for devices such as automotive applications, computers, solar energy systems, consumer electronics and general purpose devices. Furthermore, the STP23NM50N is available in both through-hole and surface mount packages for easy integration.

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