STP5NK80ZFP

Vgs(th) (Max) @ Id:	4.5V @ 100µA
Package / Case:	TO-220-3 Full Pack
Supplier Device Package:	TO-220FP
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	30W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	910pF @ 25V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	45.5nC @ 10V
Series:	PowerMESH™
Rds On (Max) @ Id, Vgs:	2.4 Ohm @ 2.15A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	4.3A (Tc)
Drain to Source Voltage (Vdss):	800V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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STP5NK80ZFP is a N-Channel enhancement mode power field-effect transistors made using STMicro\'s advanced PowerMESH™ technology. It is based on an innovative multi-source, multi-gate structure. This technology enables the device to provide low on-resistance, low gate charge and low gate resistance. This device is intended for use in high power applications, such as motor drives and converter applications.The STP5NK80ZFP is designed to be a cost effective solution for those needing high frequency, rugged devices with low on-resistance and low gate charge. The device is capable of operating at currents up to 5A and can handle voltages up to 80V. This makes it an ideal choice for applications that require high-load current switching or in high-efficiency applications such as DC–DC converter.The STP5NK80ZFP is an N-channel MOSFET, meaning it is based on a metal-oxide semi-conductor and is controlled by a voltage applied to the gate terminal. This voltage acts to attract electric charge carriers to the drain side of the MOSFET, allowing current to move from the source to the drain. N-channel MOSFETs are commonly used for switching power in high-power applications, as they have a higher switching speed than BJTs (Bipolar Junction Transistors).The STP5NK80ZFP uses STMicro’s revolutionary PowerMESH™ technology in order to minimize the device’s on-state resistance and gate charge. It also uses a junction gate structure to minimize gate leakage current. This makes the device extremely reliable and allows it to be used in high-reliability devices.The STP5NK80ZFP is a low-cost solution and is extremely versatile. It is an ideal choice for applications that require high frequency, rugged devices with low on-resistance and low gate charge. It is most suitable for applications such as DC–DC converters and motor drives, as it is capable of handling high current and voltage.In conclusion, the STP5NK80ZFP is a versatile N-channel MOSFET, using STMicro’s PowerMESH™ technology for low on-resistance and low gate charge. It is able to handle current levels up to 5A and voltages up to 80V, making it an ideal choice for those needing high frequency, rugged devices with low on-resistance and low gate charge. With its advanced structure and reliability, the STP5NK80ZFP is an excellent choice for high-power applications, such as motor drives and converter applications.

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