STP6N60M2

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-220-3
Supplier Device Package:	TO-220
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	60W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	232pF @ 100V
Vgs (Max):	±25V
Gate Charge (Qg) (Max) @ Vgs:	8nC @ 10V
Series:	MDmesh™ II Plus
Rds On (Max) @ Id, Vgs:	1.2 Ohm @ 2.25A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	4.5A (Tc)
Drain to Source Voltage (Vdss):	600V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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STP6N60M2 is a field-effect transistor (FET) manufactured by Microchip. It is a type of MOSFET, a type of field-effect transistor commonly used in small signal power-switching applications. The STP6N60M2 is a depletion type FET with a rating of 600V and 6A. It is used as a power switching device to control and regulate the flow of current in power circuits.STP6N60M2 is a single MOSFET with N-channel vertical structure. It consists of a P-type silicon substrate, two N-type doping wells (source and drain) and a gate oxide layer. An oxide layer is used to isolate the source and drain wells from the substrate. This separation of substrate and wells prevents charge carriers from diffusing between them.The source and drain terminals of STP6N60M2 are designed to handle large voltages and currents. The P substrate acts as the FET’s insulation layer, preventing reverse conduction from the drain to the source when biased in forward mode. The gate oxide layer isolates the gate from the source and drain. As the gate voltage is increased, the gate-to-source capacitance increases, as does the gate-to-drain capacitance.When a positive voltage is applied to the gate terminal, the gate oxide layer allows charge carriers (electrons and holes) to move freely in the channel. This creates a low-resistance channel between the source and drain. As the gate voltage is increased, the channel widens, further reducing the resistance. As the channel becomes wider, the STP6N60M2 is able to handle larger currents.The STP6N60M2 is used in a variety of power-switching applications, such as switching DC/AC converters and motor-control systems. It is also suitable for use in high-frequency AC/DC converters and high-voltage logic circuits. The device’s high breakdown voltage, low on-resistance, and low gate charge make it suitable for use in switching circuits.The STP6N60M2 is a popular choice for a variety of power-switching applications for its reliability, high temperature range, and ease of use. It offers an economical solution for switching applications and is available in a variety of package sizes. Its versatile design means it can be used in a number of applications, from low-power switching to high-power switching. It is also suitable for use in a variety of temperature ranges, allowing it to be used in applications where high temperatures are present.In conclusion, the STP6N60M2 is a versatile and reliable power-switching transistor. It has a wide range of applications and temperature range, making it suitable for a variety of switching applications. Its ratings, low on-resistance, and low gate charge make it an economical solution for power-switching applications.

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