STP80NF06 Allicdata Electronics
Allicdata Part #:

497-3201-5-ND

Manufacturer Part#:

STP80NF06

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 60V 80A TO-220
More Detail: N-Channel 60V 80A (Tc) 300W (Tc) Through Hole TO-2...
DataSheet: STP80NF06 datasheetSTP80NF06 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Power Dissipation (Max): 300W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 3850pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
Series: STripFET™ II
Rds On (Max) @ Id, Vgs: 8 mOhm @ 40A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Not For New Designs
Packaging: Tube 
Description

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The STP80NF06 is an N-channel enhancement mode field-effect transistor (FET). It has a 30V drain-source voltage, providing excellent switching performance. Additionally, it provides low threshold voltage and drain current, making it suitable for low power applications.

The transistor is made with a polysilicon gate, which improves its performance in the high frequency environment. It has a maximum drain current rating of 12A and can handle up to 1.2V in gate drive, making it suitable for very high current and power dissipation. The transistor also has a maximum thermal resistance of 125°C/W, making it ideal for low-power, low-temperature applications.

The transistor is frequently used for power management applications such as high-efficiency, noise-free switch mode power supplies, motor controls, and motor drives. It can also be used in high-speed switching, low noise amplifier applications, and high-efficiency DC/DC converter control.

The STP80NF06 has a pinch-off voltage of 3V to 4V, making it suitable for low voltage applications. It also has a low total gate charge, reducing gate input capacitance. Moreover, it has fast switching characteristic, allowing for high switching frequencies, resulting in low power dissipation.

The transistor works on the principle of controlling electric current by applying a voltage to its gate terminal. When the gate voltage is below the threshold voltage of the device, the device will remain off (non-conductive). When the voltage is rises above the threshold voltage, the device will turn on (conductive). By controlling the gate voltage, the device can control how much electric current is allowed to pass through it.

The device can be used for a wide range of applications, depending on its characteristics. It is commonly used in low-power systems, such as mobile phones and portable electronic devices, where its low power dissipation is particularly beneficial. It is also used in intermediate power systems, such as LED drivers, where it can provide reliable operation and low gate charge. Additionally, it is used in power control circuits and motor drivers, where its fast switching characteristics are a great benefit.

Overall, the STP80NF06 is a low-power, low-voltage N-channel FET transistor with a wide range of applications. It features an excellent combination of low power dissipation, low voltage, low pinch-off voltage, and low total gate charge. Additionally, it has fast switching characteristics, making it ideal for low-power, low temperature applications. As a result, it is frequently used for power management, switching, and control functions.

The specific data is subject to PDF, and the above content is for reference

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