STP95N2LH5 Allicdata Electronics
Allicdata Part #:

497-9093-5-ND

Manufacturer Part#:

STP95N2LH5

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 25V 80A TO-220
More Detail: N-Channel 25V 80A (Tc) 80W (Tc) Through Hole TO-22...
DataSheet: STP95N2LH5 datasheetSTP95N2LH5 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: STripFET™ V
Packaging: Tube 
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Rds On (Max) @ Id, Vgs: 4.9 mOhm @ 40A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 13.4nC @ 5V
Vgs (Max): ±22V
Input Capacitance (Ciss) (Max) @ Vds: 1817pF @ 25V
FET Feature: --
Power Dissipation (Max): 80W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3
Description

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The STP95N2LH5 is an N-channel enhancement mode Field-Effect Transistor (FET) manufactured by STMicroelectronics. It belongs to the STripFET™II family, designed by STMicroelectronics to provide reliable low-voltage (< 20V) switching and amplification in many different applications. The STP95N2LH5 is fabricated using STMicroelectronics’ proprietary PowerTrench® process, which combines the performance of a vertical on-cell power transistor with the enhanced regulation and control characteristics of an advanced trench field-effect transistor.The STP95N2LH5 has an optimized structure featuring a dielectric isolation layer between the SOT-223 and the Gate Lead frame, which prevents electric leakage and ensures a low threshold voltage that does not depend on external environment. The STP95N2LH5 can switch loads of up to 10A at temperatures up to 175°C. Its high speed switching capability makes it ideal for applications such as power transistors, crossover filters, high side switches, and chopper control.The STP95N2LH5 operates on the principles of a FET. As with the bipolar transistor, FETs are three-terminal devices that uses the flow of electrons for amplification or switching. They act as electronic switches, opening and closing a circuit as the input signal is applied or removed. The STP95N2LH5 is an N-channel FET, which means that it has negative voltage at the gate to open or close the channel.Like all FETs, the STP95N2LH5 consists of two regions: the source and the drain. The source is held at a constant voltage, while the voltage at the drain is variable and depends on the voltage applied to the gate. When the gate voltage is below the certain threshold voltage, the FET is off, and no current flows through the drain. When the gate voltage is greater than the threshold voltage, the FET is on, and a current can flow from the source to the drain.The STP95N2LH5, as with all other FETs, has an important characteristic, the transconductance. The transconductance defines the amount of current that can flow between the source and the drain for a given gate voltage. The STP95N2LH5 has an exceptional transconductance and a Rds on value of only 12 mOhms, making it ideal for switching and amplification applications.The STP95N2LH5 is a versatile device and can be used in many applications, such as motor control, load switching and power supply design. It is also ideal for applications that require high speed switching, such as communication circuits, power MOSFETs and high side switches. Thanks to its optimized structure and high speed switching, the STP95N2LH5 can be used in a wide range of high frequency applications, such as PWM switching, step-down systems and power amplifier design.In conclusion, the STP95N2LH5 is a versatile N-channel FET manufactured by STMicroelectronics. It operates on the principles of a FET, where the current flow between the source and the drain is controlled by the voltage applied to the gate. The STP95N2LH5 has an exceptional transconductance and a low Rds on value, making it suitable for many applications, such as motor control, load switching, power amplifier design and PWM switching.

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