STT5N2VH5 Discrete Semiconductor Products

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STT5N2VH5 is a Single N-channel Enhancement Mode Field Effect Transistor (FETs), also known as MOSFET (Metal Oxide Semiconductor FET). This FET is of the vertical DMOS type and is specifically designed for high power switching applications, with its drain current rated at 37A and drain-source voltage rating at 100V. The STT5N2VH5 is generally used in switching applications such as switching mode power supplies, motor control and in other analogous applications.

MOSFETs have an insulated gate, which makes them highly resistive to heat, vibration and harsh environments. This capability along with their small size, easy integration in complex electronic systems, and low power loss in switching applications make them ideal for such applications. The STT5N2VH5 MOSFETs is highly durable and withstands voltage actuation for long periods of time.

The working principle of STT5N2VH5 is based on the principle by which a charge is stored on the semiconductor substrate. When a positive potential difference is applied between the gate and the source, the electrons are forced away from the gate region, creating an inversion layer. This inversion layer then acts as a conducting channel connecting the source to the drain. By controlling this channel width with the gate voltage, it is possible to regulate the amount of current flow between the source and the drain. In this way, the STT5N2VH5 can be used as a low power switch.

The use of STT5N2VH5 MOSFETs in high power switching applications helps to reduce the power consumption in the circuit. With its low on-state resistance and high voltage rating, this FET can be used for switching off high current loads such as electric motors and high power cathode ray tubes. Moreover, since this FET is highly resistive to high temperatures, it can be used in applications that require heat dissipation.

The high-performance and low on-state resistance nature of the STT5N2VH5 makes it an ideal choice for high power switching applications. Its highly durable nature and large drain-source voltage rating are needed for switching off high power circuits. Additionally, since this FET does not produce any noise when switching, it can be used for environment-friendly applications. In addition, STT5N2VH5 is easy to integrate into complex electronic systems and it provides reliable operation without any application of mechanical deterioration.

In conclusion, STT5N2VH5 is a high quality MOSFET with features ideal for high power switching applications. With its low on-state resistance and high voltage rating, this FET is highly durable and is able to switch off circuits at high power levels. Its small size, easy integration, and noise-free operation make it an ideal choice for environment-friendly switching applications. Furthermore, STT5N2VH5 can be easily integrated into complex electronic systems for reliable operation.

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