STU95N2LH5

Series:	STripFET™ V
Packaging:	Tube
Part Status:	Obsolete
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	25V
Current - Continuous Drain (Id) @ 25°C:	80A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	5V, 10V
Rds On (Max) @ Id, Vgs:	4.9 mOhm @ 40A, 10V
Vgs(th) (Max) @ Id:	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	13.4nC @ 5V
Vgs (Max):	±25V
Input Capacitance (Ciss) (Max) @ Vds:	1817pF @ 25V
FET Feature:	--
Power Dissipation (Max):	70W (Tc)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	I-PAK
Package / Case:	TO-251-3 Short Leads, IPak, TO-251AA

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STU95N2LH5 Application Field and Working Principle

STU95N2LH5 is a single N-Channel Enhancement Mode Power MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) manufactured by Semtech Corporation. This specialized transistor was developed as an advanced solution for fast switching and high power applications in power supply designs, motor drives, high power amplifiers, telecoms, consumer electronics, and cloud computing. This semiconductor device has a high efficiency, fast switching time and low RDS(on) (resistance at Drain and Source), allowing it to handle high current and voltage in the most demanding applications.To understand the application field and working principle of STU95N2LH5, it is important to understand the definition of MOSFET, which stands for Metal Oxide Semiconductor Field-Effect Transistor. It is a type of semiconductor device that utilizes a voltage gate to control the flow of current through channels between the source and the drain. It consists of four basic regions: conductive source, conductive drain, a gate insulator and gate electrode.MOSFETs are classified by their type, number of channels and gate structure. STU95N2LH5 is a N-Channel Enhancement Mode MOSFET, which means its output current is carried by electrons between the source and the drain (N-type material). This type of device is typically used for high power applications, including motor drives, high power amplifiers, and more.The STU95N2LH5 provides great conductivity and low power consumption. It works with a voltage gate, meaning that a control voltage applied to the gate determines the current flow between the source and drain. This transistor has an extremely low on-state resistance and provides a fast-switching speed with low capacitance, efficient operation, long service life and low noise.The working principle of STU95N2LH5 is simple. When the voltage applied to the gate is high, the MOSFET transistor is in “on” state and the current flows freely between the source and drain. When the gate voltage is low, the MOSFET is in “off” state and there is no current flow between the source and drain. This makes the device ideal for applications that require fast switching, high power efficiency and low power consumption.In conclusion, STU95N2LH5 is a single N-Channel Enhancement Mode Power MOSFET developed for power supply designs, motor drives, high power amplifiers, telecoms, consumer electronics, and cloud computing applications. It has an extremely low on-state resistance and provides a fast switching speed with low capacitance, efficient operation, long service life and low noise. The working principle of STU95N2LH5 is simple; the current flow between the source and drain is determined by the voltage gate. This transistor is an ideal choice for applications that require fast switching, high power efficiency and low power consumption.

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