STW8NK80Z Allicdata Electronics
Allicdata Part #:

497-12807-5-ND

Manufacturer Part#:

STW8NK80Z

Price: $ 2.42
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 800V 6.2A TO-247
More Detail: N-Channel 800V 6.2A (Tc) 140W (Tc) Through Hole TO...
DataSheet: STW8NK80Z datasheetSTW8NK80Z Datasheet/PDF
Quantity: 484
1 +: $ 2.19870
30 +: $ 1.77324
120 +: $ 1.59590
510 +: $ 1.24125
1020 +: $ 1.02846
Stock 484Can Ship Immediately
$ 2.42
Specifications
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Package / Case: TO-247-3
Supplier Device Package: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 140W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1320pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 46nC @ 10V
Series: SuperMESH™
Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 3.1A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc)
Drain to Source Voltage (Vdss): 800V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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Introduction to STW8NK80Z

STW8NK80Z is an N-channel power field-effect transistor (FET) designed for use in a variety of applications. It is a technology enhanced version of the traditional FET, allowing for higher switching speeds, lower on-state resistances, and improved reliability over its standard counterpart. The technology used to create the STW8NK80Z makes it well suited for applications in power related areas, such as motor drivers, AC/DC and DC/DC conversion, and LED lighting.

Application Field of STW8NK80Z

Due to its improved efficiency and reliability, the STW8NK80Z is ideally suited for power management applications where power efficiency and reliability are paramount. Its low on-state resistance, high switching speed and low gate charge make it a great choice for applications that require fast switching speeds and high power levels. In addition, it is also a great choice for applications that require an extremely low dropout voltage and high peak current switching capability.Examples of the types of applications where STW8NK80Z can be employed include motor drivers, LED lighting, AC/DC and DC/DC conversion, and switched-mode power supplies. Its low on-state resistance makes it an ideal choice for motor drivers, where fast switching and low power consumption are both required. Moreover, its low gate charge and high peak current capability make it well suited for applications such as LED lighting, where high peak current and fast switching speeds are both necessary. Finally, its low on-state resistance and low gate charge make it an excellent choice for applications such as DC/DC and AC/DC conversion, where high efficiency and fast switching times are desired.

Working Principle of STW8NK80Z

The STW8NK80Z is an N-channel MOSFET that uses a metal-oxide-semiconductor (MOS) structure to provide improved performance characteristics over traditional bipolar transistors. It is built on a silicon substrate and consists of a source, a drain, a gate and a substrate. The source and drain electrodes are connected to a load supply voltage, while the gate is connected to a control voltage. When a voltage is applied to the gate, it creates an electric field that controls the current flow through the channel between the source and the drain.The STW8NK80Z offers improved performance over its traditional predecessor due to its use of a smaller physical size and its greater ability to withstand higher operating temperatures. In addition, its internal construction also makes it highly efficient and reliable in applications where low on-state resistance is a benefit. When the gate voltage is low, the FET acts as an open switch, and no current will flow between the source and the drain. When the gate voltage increases, the switching speed is increased, and the on-state resistance decreases, allowing current to flow between the source and the drain. When the voltage at the gate reaches a certain threshold level, the transistor will be fully turned on and the device will reach its maximum current carrying capabilities.

Conclusion

The STW8NK80Z is a powerful single N-channel MOSFET that provides improved performance over its predecessor in many areas. Its high switching speed, low on-state resistance, and improved thermal characteristics make it an ideal choice for many power management applications, and its ability to handle large peak currents make it an excellent choice for applications such as LED lighting and DC/DC conversion. Overall, the STW8NK80Z is a reliable and efficient solution for a variety of power related applications.

The specific data is subject to PDF, and the above content is for reference

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