TC58NYG1S3HBAI6 Integrated Circuits (ICs) |
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Allicdata Part #: | TC58NYG1S3HBAI6-ND |
Manufacturer Part#: |
TC58NYG1S3HBAI6 |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Toshiba Memory America, Inc. |
Short Description: | IC FLASH 2G PARALLEL 67VFBGA |
More Detail: | FLASH - NAND (SLC) Memory IC 2Gb (256M x 8) Parall... |
DataSheet: | TC58NYG1S3HBAI6 Datasheet/PDF |
Quantity: | 459 |
Series: | -- |
Packaging: | Tray |
Part Status: | Active |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NAND (SLC) |
Memory Size: | 2Gb (256M x 8) |
Write Cycle Time - Word, Page: | 25ns |
Access Time: | 25ns |
Memory Interface: | Parallel |
Voltage - Supply: | 1.7 V ~ 1.95 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 67-VFBGA |
Supplier Device Package: | 67-VFBGA (6.5x8) |
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A TC58NYG1S3HBAI6 is a form of Random Access Memory (RAM) that is used in information technology applications. It is made up of memory cells designed to store data temporarily for use in various applications, such as a computer, television, or smartphone. The TC58NYG1S3HBAI6 works by allowing a computer or other device to access data in a randomized manner, without needing to keep it all clocked in one place. This specific type of RAM is used in high-end devices, and is beneficial because it has a very fast access time and is typically reliable. Additionally, the TC58NYG1S3HBAI6 also features built-in error correction codes (ECC) to help keep data accurate.
The TC58NYG1S3HBAI6 is a type of RAM that is widely used in many different types of applications. It can be found in professional systems such as large scale corporate networks, cloud storage systems, and data centers. It is also used in personal devices such as PCs, video game consoles, and the latest smartphones and tablets. This form of RAM is also used in embedded systems, such as those found in electronic machinery, automobiles, and other machinery that require quick access to data or temporary storage.
The TC58NYG1S3HBAI6 works by utilizing built-in circuits that are designed to generate an electrical signal when data is to be stored. This signal is then sent to the memory cells, which activate and store the data. When the signal is sent to read the data, the cells are again activated and the information is transferred to the desired destination (usually a CPU in a computer). This process is repeated over and over as data is written and read from the memory cells. With the built-in ECC, the TC58NYG1S3HBAI6 is able to detect and correct any errors that may arise from the read/write process.
The TC58NYG1S3HBAI6 is extremely fast and efficient at what it does, and for this reason, it is becoming increasingly popular in the information technology industry. It is especially useful in applications where large amounts of data must be processed quickly and accurately. Additionally, because of its built-in ECC, the TC58NYG1S3HBAI6 is a great way to ensure that data is accurate and secure. For these reasons, it is a great option for both professional and consumer applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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TC58 | Cornell Dubi... | 0.0 $ | 1000 | CAP ALUM 40UF 250V AXIAL4... |
TC58BVG0S3HBAI4 | Toshiba Memo... | -- | 41 | IC FLASH 1G PARALLEL 63TF... |
TC58NVG1S3HBAI4 | Toshiba Memo... | -- | 26 | IC FLASH 2G PARALLEL 63TF... |
TC58NVG2S0HBAI6 | Toshiba Memo... | -- | 37 | IC FLASH 4G PARALLEL 67VF... |
TC58BYG2S0HBAI6 | Toshiba Memo... | 3.56 $ | 191 | IC FLASH 4G PARALLEL 67VF... |
TC58BVG0S3HTA00 | Toshiba Memo... | -- | 1000 | IC FLASH 1G PARALLEL 48TS... |
TC58BVG0S3HTAI0 | Toshiba Memo... | -- | 1000 | IC FLASH 1G PARALLEL 48TS... |
TC58BVG1S3HBAI6 | Toshiba Memo... | -- | 1000 | IC FLASH 2G PARALLEL 67VF... |
TC58BVG1S3HTA00 | Toshiba Memo... | -- | 1000 | IC FLASH 2G PARALLEL 48TS... |
TC58BVG1S3HTAI0 | Toshiba Memo... | -- | 1000 | IC FLASH 2G PARALLEL 48TS... |
TC58BVG2S0HBAI4 | Toshiba Memo... | -- | 1000 | IC FLASH 4G PARALLEL 63TF... |
TC58BVG2S0HTA00 | Toshiba Memo... | -- | 1000 | IC FLASH 4G PARALLEL 48TS... |
TC58BVG2S0HTAI0 | Toshiba Memo... | -- | 1000 | IC FLASH 4G PARALLEL 48TS... |
TC58BYG0S3HBAI6 | Toshiba Memo... | -- | 1000 | IC FLASH 1G PARALLEL 67VF... |
TC58BYG1S3HBAI6 | Toshiba Memo... | 2.74 $ | 1000 | IC FLASH 2G PARALLEL 67VF... |
TC58NVG0S3HBAI4 | Toshiba Memo... | -- | 1000 | IC FLASH 1G PARALLEL 63TF... |
TC58NVG0S3HBAI6 | Toshiba Memo... | -- | 1000 | IC FLASH 1G PARALLEL 67VF... |
TC58NVG0S3HTA00 | Toshiba Memo... | -- | 25510 | IC FLASH 1G PARALLEL 48TS... |
TC58NVG0S3HTAI0 | Toshiba Memo... | -- | 1000 | IC FLASH 1G PARALLEL 48TS... |
TC58NVG1S3HBAI6 | Toshiba Memo... | -- | 1000 | IC FLASH 2G PARALLEL 67VF... |
TC58NVG1S3HTA00 | Toshiba Memo... | -- | 1000 | IC FLASH 2G PARALLEL 48TS... |
TC58NVG1S3HTAI0 | Toshiba Memo... | -- | 1000 | IC FLASH 2G PARALLEL 48TS... |
TC58NVG2S0HBAI4 | Toshiba Memo... | -- | 7459 | IC FLASH 4G PARALLEL 63TF... |
TC58NVG2S0HTA00 | Toshiba Memo... | -- | 1000 | IC FLASH 4G PARALLEL 48TS... |
TC58NVG2S0HTAI0 | Toshiba Memo... | -- | 1000 | IC FLASH 4G PARALLEL 48TS... |
TC58NYG0S3HBAI6 | Toshiba Memo... | -- | 1000 | IC FLASH 1G PARALLEL 67VF... |
TC58CVG0S3HRAIG | Toshiba Memo... | -- | 1000 | IC FLASH 1G SPI 104MHZ 8W... |
TC58CVG2S0HRAIG | Toshiba Memo... | 5.08 $ | 1000 | IC FLASH 4G SPI 104MHZ 8W... |
TC58CVG0S3HQAIE | Toshiba Memo... | 0.0 $ | 1000 | IC FLASH 1G SPI 104MHZ 16... |
TC58CYG0S3HQAIE | Toshiba Memo... | 0.0 $ | 1000 | IC FLASH 1G SPI 104MHZ 16... |
TC58CVG2S0HQAIE | Toshiba Memo... | 0.0 $ | 1000 | IC FLASH 4G SPI 104MHZ 16... |
TC58NVG1S3ETA00 | Toshiba Memo... | -- | 1000 | IC FLASH 2G PARALLEL 48TS... |
TC58NVG1S3ETAI0 | Toshiba Memo... | -- | 1000 | IC FLASH 2G PARALLEL 48TS... |
TC58NVG3S0FTA00 | Toshiba Memo... | -- | 1000 | IC FLASH 8G PARALLEL 48TS... |
TC58BVG0S3HBAI6 | Toshiba Memo... | -- | 14 | IC FLASH 1G PARALLEL 67VF... |
TC58NYG2S0HBAI6 | Toshiba Memo... | -- | 11 | IC FLASH 4G PARALLEL 67VF... |
TC58NVG2S0FTA00 | Toshiba Memo... | -- | 1000 | IC FLASH 4G PARALLEL 48TS... |
TC58NYG1S3HBAI6 | Toshiba Memo... | -- | 459 | IC FLASH 2G PARALLEL 67VF... |
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