TIP31B Discrete Semiconductor Products

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TIP31B is an NPN transistor. It belongs to the "Bipolar (BJT) - Single" type of transistors. The transistor uses NPN technology, which means that the majority charge carriers that exist between the base and the emitter are negative electrons. The transistor has many application fields, including switching, linear amplification, for high voltage and power applications, as well as for RF amplifiers. It is also used in power control and in power supplies.

The TIP31B\'s collector current is from -1 A to -7 A and its power dissipation is from 18 W to 55 W. It also has an operating temperature range from -65°C to 150°C, and a maximum collector-emitter voltage of 60 V. The TIP31B has an emitter-base voltage of 6 V and a collector-emitter voltage of 60 V. It is capable of delivering high peak collector currents up to 8 A and can switch speeds of up to 600 kHz.

The working principle of a TIP31B is based on the NPN structure. The base is a thin semiconductor layer, separated from the collector. When a voltage drop occurs across the emitter - base junction, electrons flow in and create a current, which carries a charge through the base and travels to the collector. In this way, the NPN current forms and it is used for the control of an application.

The TIP31B has many advantages when compared to other commonly used transistors. It has a low collector-emitter saturation voltage and can handle high peak collector currents. It is also capable of fast switching and delivers better performance compared to similar transistors. Furthermore, the TIP31B is inexpensive and easy to source parts for.

The TIP31B is a very useful and versatile transistor for many types of applications. Its low-saturation voltage, fast switching speed and easy availability make it an attractive transistor for commercial and industrial uses. It can be used for switching, linear amplification, RF amplifier, and power control applications.

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