TK31N60X,S1F Allicdata Electronics
Allicdata Part #:

TK31N60XS1F-ND

Manufacturer Part#:

TK31N60X,S1F

Price: $ 4.35
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: MOSFET N-CH 600V 30.8A TO-247
More Detail: N-Channel 600V 30.8A (Ta) 230W (Tc) Through Hole T...
DataSheet: TK31N60X,S1F datasheetTK31N60X,S1F Datasheet/PDF
Quantity: 3
1 +: $ 3.95640
30 +: $ 3.17877
120 +: $ 2.89622
510 +: $ 2.34520
1020 +: $ 1.97789
Stock 3Can Ship Immediately
$ 4.35
Specifications
Vgs(th) (Max) @ Id: 3.5V @ 1.5mA
Package / Case: TO-247-3
Supplier Device Package: TO-247
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 230W (Tc)
FET Feature: Super Junction
Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 300V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
Series: DTMOSIV-H
Rds On (Max) @ Id, Vgs: 88 mOhm @ 9.4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 30.8A (Ta)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The TK31N60X,S1F is part of the family of single N-channel MOSFETS (Metal-Oxide-Semiconductor Field-Effect Transistors). MOSFETs are commonly used in applications where switching is required. The MOSFET consists of a source which is the entry point for current and a drain which is the exit point, as well as a gate to control the passage of current.

The TK31N60X,S1F specifically, is designed with efficiency in mind. The low-volt and high current design of this MOSFET allows it to handle high-frequency switching and operate with minimal loss in power. It can be found in applications ranging from energy management, motor control and industrial automation.

The working principle of the TK31N60X,S1F MOSFET can be broken down into two parts. The first is the FET (Frequency Effect Transistor) and the second is the MOSFET. The FET is responsible for controlling the electrical behavior by changing its resistance in response to a voltage. The MOSFET controls the current flow through the channel by changing the voltage applied to the gate. This combination of the two devices is what enables the MOSFET to switch at such high speeds, with minimal loss of power or distortion in the current.

In addition to its efficient design, the TK31N60X,S1F has several other useful functions. It can withstand up to 30 V applied to the source and drain, allowing it to be used in a wide range of applications. It also has an incredibly low on-resistance, meaning that it has minimal voltage drop even at high currents. This makes it an ideal choice for applications where a high-capacity current is needed with minimal loss.

In conclusion, the TK31N60X,S1F is a powerful MOSFET with many useful features. Its low-volt and high current design allows it to handle high-frequency switching with minimal loss in power, making it ideal for applications ranging from energy management, motor control and industrial automation. Its wide voltage range, low on-resistance and high capacity current make it an excellent choice for use in many different types of applications.

The specific data is subject to PDF, and the above content is for reference

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