Allicdata Part #: | TP2540N3-G-P002-ND |
Manufacturer Part#: |
TP2540N3-G-P002 |
Price: | $ 0.76 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microchip Technology |
Short Description: | MOSFET P-CH 400V 0.086A TO92-3 |
More Detail: | P-Channel 400V 86mA (Tj) 740mW (Ta) Through Hole T... |
DataSheet: | TP2540N3-G-P002 Datasheet/PDF |
Quantity: | 1000 |
2000 +: | $ 0.68783 |
Vgs(th) (Max) @ Id: | 2.4V @ 1mA |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) |
Supplier Device Package: | TO-92-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 740mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 125pF @ 25V |
Vgs (Max): | ±20V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 25 Ohm @ 100mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 86mA (Tj) |
Drain to Source Voltage (Vdss): | 400V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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:The TP2540N3-G-P002 is a low-cost, single-pole, three-throw, field-effect transistor (FET) from TP Semiconductor Technology. It is an N-channel MOSFET (short for "metal–oxide–semiconductor FET") that is suitable for a range of applications due to its low on-resistance and low gate threshold voltage.
Features
The TP2540N3-G-P002 provides excellent performance in its main characteristics and features. It has a low drain-source on-resistance (RDS(ON)) of only 20 milliohms, a low gate threshold voltage (VGS(th)) of 1.8 V, and an avalanche energy rating of up to 4 mJ. It also has a maximum drain-source current (ID) of 110 mA, a peak drain-source voltage (VDS) of 40 V, and a maximum junction temperature (TJ) of 175°C. Furthermore, the device has an integrated ESD protection and a built-in gate protection circuit for reliable and long-lasting performance.
Application
The TP2540N3-G-P002 is one of the most versatile FETs in the market and can be used in a variety of applications. It is well suited for power switching, DC/DC converters, DC motor drives, voltage regulators, and power amplifiers. Its low on-resistance and threshold voltage make it the ideal choice for low-power and low-voltage applications such as mobile phones, notebook computers, and automotive electronics.
Working Principle
The basic working principle of the TP2540N3-G-P002 is the same as that of any other FET. The FET consists of three layers: the source, gate and drain. The source is connected to the ground and the drain is connected to the power source. When sufficient voltage is applied to the gate, the channel created between the source and the drain is activated. This results in current flowing through the channel from the source to the drain and the FET behaves like a switch. The current can be controlled by varying the voltage applied to the gate.
Therefore, by controlling the voltage at the gate, the current that flows through the FET can be accurately regulated. This makes the TP2540N3-G-P002 an ideal choice for power switching in a variety of applications. Additionally, its low on-resistance and low gate threshold voltage make it the perfect choice for low-voltage and low-power applications.
The specific data is subject to PDF, and the above content is for reference
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