TPS543C20RVFT

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1. Describe

TPS543C20RVFT uses internal compensation Analog Peak Current Mode Control with Clock Synchronizable, Fixed Frequency Modulator for EMI Sensitive POLs. Internal integrators and direct Amplifying the ramp-tracking loop eliminates the External compensation in a wide range frequency, thereby enabling system design Flexible, dense and simple. Optional API and body Braking helps improve transient performance Significantly reduces undershoot and overshoot, respectively. Integrated NexFET™ MOSFETs Low-loss switches help improve efficiency and provide Up to 40A Current in 5mm × 7mm PowerStack™ Package Features layout-friendly thermal pads. Two TPS543C20 Devices can be stacked to provide up to 80- a point of load.

2. Feature

    1. Internally compensated advanced current mode control 40A POL

    2. Input voltage range: 4 V to 14 V

    3. Output voltage range: 0.6 V to 5.5 V

    4. Integrated 3/0.9-mΩ stacked NexFET™ power stage with lossless low-side current sensing

    5. Fixed frequency - Sync to external clock and/or sync output

    6. Pin-strapped programmable switching frequency

        – 300 kHz to 2 MHz for standalone

        – 300 kHz to 1 MHz stackable

    7. Stack 2x up to 80 A with current sharing, voltage sharing and CLK synchronization

    8. 0.6 V to 1.1 V pin-bundled programmable reference voltage with 0.5% accuracy

    9. Differential remote sensing

  10. Safe start to pre-biased output

  11. High precision hiccup current limit

  12. Asynchronous pulse injection (API) and body braking

  13. 40-pin, 5mm × 7mm LQFN package with 0.5mm pitch and a single thermal pad

  14. Create custom designs using TPS543C20 and WEBENCH® Power Designer

3. Pin configuration

4. Pin Description

5. Application

    1. Wireless and wired communications infrastructure equipment

    2. Enterprise servers, switches and routers

    3. Enterprise storage, SSD

    4. ASIC, SoC, FPGA, DSP cores and I/O rails

6. Function description

The TPS543C20RVFT device is a high performance integrated FET converter that supports thermal current ratings up to 40A. It integrates two N-channel NexFET™ power MOSFETs for high power density and small PCB layout area. The drain-source breakdown voltage of these FETs is 20 V DC and transients. Avalanche breakdown occurs if the absolute maximum voltage rating exceeds 20 V. To limit switching node ringing of the device, TI recommends adding an R-C snubber between the SW node and the PGND pin. Also, a 10~100nF capacitor must be used from VIN (Pin 25) to GND (Pin 2 7) to reduce high side FET stress.

7. Application Information

The TPS543C20RVFT device is a highly integrated synchronous step-down DC/DC converter. The device is used to convert a higher DC input voltage to a lower DC output voltage with a maximum output current of 40 A. Use the following design procedure to select key component values for this device.