TPW1R005PL,L1Q

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The TPW1R005PL,L1Q is a single monolithic MOSFET transistor manufactured by NXP, more commonly known as an Enhancement-Mode MOSFET transistor. It is a type of Field-Effect Transistor (FET) that uses a gate voltage to control current flow, as opposed to an open collector or a bipolar junction transistor which rely on the direct flow of current to control current flow. It is a small size transistor, measuring 19 x 10.5 mm, making it a popular choice for circuit designs requiring a smaller package size. In addition, the device has a low on-resistance of just 2 ohms and a low gate-to-source capacitance of 5 pF. The device is suitable for many applications, ranging from low-side or high-side switching through to power inverters, linear regulators, and MOSFET drivers.

The TPW1R005PL,L1Q has a maximum Drain to Source Voltage (VDSS) of 60 V and a Drain to Source Maximum Current (ID) of 26 A. The device has a low threshold voltage (Vgs) of 8V, meaning that it can be switched on and off with relatively little gate current. The device also has a low on-resistance (RDS(on)) of just 2 ohms, making it suitable for applications requiring high current and minimal power loss. Furthermore, the device has a respectable maximum operating temperature of 150°C, making it suitable for use in a wide range of temperatures.

The TPW1R005PL,L1Q is a type of Enhancement-Mode MOSFET, a kind of device that allows a user to switch between conducting and non-conducting states depending on the amount of gate current applied. This is the most common type of MOSFET in use today, with the metal oxide layer allowing current to pass through the device when a voltage is applied at the gate contact and the current is allowed to flow when the voltage is reduced. In comparison to other types of MOSFET, the threshold voltage is much lower, meaning that it will switch on and off with less current. This makes the device ideal for low-level switching applications, as well as for switching high currents with little power dissipation.

The TPW1R005PL,L1Q is a popular choice for applications requiring reliable current control, such as lighting and heater control, motor control, and power converters. It is also used in power supplies where low-voltage and high-current needs to be switched with very little power dissipation. Furthermore, the device can be used in a variety of analog circuits, as it can provide precise current and voltage control mechanisms. This makes it suitable for use in amplifier circuits and switching power supplies, where accurate voltage and current regulation is required.

In summary, the TPW1R005PL,L1Q is a single monolithic Enhancement-Mode MOSFET transistor, manufactured by NXP. It is a small package size device, measuring 19 x 10.5 mm, with a low threshold voltage (Vgs) of 8V. The device has a high on-resistance of just 2 ohms and a gate-to-source capacitance of 5 pF. It is suitable for a variety of applications, including low-side or high-side switching, power inverters, linear regulators, and MOSFET drivers. In addition, it can be used in analog circuits for precise current and voltage control, as well as for applications requiring reliable switching of high currents with minimal power dissipation.

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