TS820-600B-TR Allicdata Electronics

TS820-600B-TR Discrete Semiconductor Products

Allicdata Part #:

497-5234-2-ND

Manufacturer Part#:

TS820-600B-TR

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: SCR 8A 600V DPAK
More Detail: SCR 600V 8A Sensitive Gate Surface Mount DPAK
DataSheet: TS820-600B-TR datasheetTS820-600B-TR Datasheet/PDF
Quantity: 2500
Stock 2500Can Ship Immediately
Specifications
Current - Hold (Ih) (Max): 5mA
Base Part Number: TS820
Supplier Device Package: DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
SCR Type: Sensitive Gate
Current - Non Rep. Surge 50, 60Hz (Itsm): 70A, 73A
Current - Off State (Max): 5µA
Series: --
Current - On State (It (RMS)) (Max): 8A
Current - On State (It (AV)) (Max): 5A
Voltage - On State (Vtm) (Max): 1.6V
Current - Gate Trigger (Igt) (Max): 200µA
Voltage - Gate Trigger (Vgt) (Max): 800mV
Voltage - Off State: 600V
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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A thyristor is a semiconductor device commonly referred to as a "silicon controlled rectifier," or SCR. Thyristors are generally used for high-power control and switching applications. The TS820-600B-TR is a high-power thyristor device used for a variety of applications. This article will discuss the application field and working principle of the TS820-600B-TR.

The TS820-600B-TR is suitable for use in a variety of high power switching applications, including motor control, voltage regulation, power factor correction, and welding. The device is designed with an optimized power flow algorithm and a reinforced heating element to ensure high reliability and performance in applications where high currents and voltages are present. In motor control applications, the device is used to control the current flow to a motor, allowing the motor to operate at a predetermined voltage and speed. In voltage regulation applications, it is used as a switch to regulate the flow of current, helping to ensure a constant voltage level.

The working principle of the TS820-600B-TR is based on a four-layer semiconductor structure. This structure contains two PN junctions arranged in parallel. When a current is applied to the device, one junction is forward biased and the other is reverse biased. This creates a voltage imbalance between the two junctions, which in turn causes a "latch" to form between the two elements. When current is applied, the latch prevents the device from reversing its conduction state.

The TS820-600B-TR is designed to provide reliable, high power switching and control in a wide range of applications. Its four-layer design and optimized power flow algorithm provide highly reliable performance in high-voltage and high-current applications. As such, the device is a suitable choice for motor control, voltage regulation, power factor correction, and welding applications.

The specific data is subject to PDF, and the above content is for reference

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