TZMA6V2-GS08

Diodes, typically constructed using semiconductor materials, are two-terminal electrical components with a wide range of uses. As part of the diode family, Zener diodes are used to maintain a low voltage in a circuit and act as voltage reference. A single Zener diode is an individual implementation of a voltage regulator circuit that limits the voltage to a predetermined level. TZMA6V2-GS08 is a single Zener diode manufactured by NXP Semiconductors with a wide range of uses.

TZMA6V2-GS08 is a single Zener diode with a reverse breakdown voltage of 6V. It has a DO-213AC plastic SMD package with a termination in a form of a template (code “GS08”), a maximum of 3.5mW power dissipation, a Zener current of 10mA at a rated Zener voltage, and a maximum reverse leakage current of 2µA at a rated reverse voltage. This product’s striking feature is its temperature range from -65°C to 150°C. It features excellent series resistance, well-matched characteristic curves and low-level noise owing to its closely-matched pair characteristics. Additionally, this diode has a 70% higher power dissipation in comparison to a conventional type.

TZMA6V2-GS08 is also designed for signal and level shift applications. It can be used as a clamp for preventing signal distortion as signal levels reduce and crossing incompatible logic devices. It can tolerate high-speed signal and high ESD levels, allowing it to be utilized in automotive and industrial systems. Moreover, it can be utilized in power supplies, preventing the voltage in a power supply from rising above a safe level.

Working Principle

TZMA6V2-GS08 is a Zener diode, which consists of a PN junction diode that is connected in reverse bias with a voltage greater than the breakdown voltage. The Zener diode can only allow electricity to flow in a reverse direction, meaning that the electrons are being pushed back against the applied electric field, which results in a low voltage in the circuit. The breakdown voltage of 6V is the voltage where the reverse current will increase, forming a more conductive path through the diode.

When there is no voltage in the circuit, a certain junction potential VJ exists due to the internal structure of the diode. As the external voltage reaches VJ, the electrons start flowing and the junction resistance decreases, causing the voltage to drop incrementally. When the voltage reaches the breakdown voltage, the current starts increasing rapidly. This current continues to increase until either the external power supply fails or there are additional current-limiting components added, thus preventing overload.

When the voltage across the diode exceeds the breakdown voltage, the diode will become a low resistance path, preventing the voltage from increasing further and maintaining a low voltage in the circuit. A steady state is reached when the voltage across the diode reaches the rated value. As the external voltage increases, the current across the diode remains constant, consequently resulting in a low voltage in the circuit.

Conclusion

TZMA6V2-GS08 is a single Zener diode used in a wide range of applications as a voltage regulator with a reverse breakdown voltage of 6V and operation temperature range of -65°C to 150°C. It is an ideal choice for signal and level shift applications, power supplies, and other automotive and industrial applications. It has a DO-213AC plastic SMD package with a termination in a form of a template (code “GS08”), a maximum of 3.5mW power dissipation, a Zener current of 10mA at a rated Zener voltage, and a maximum reverse leakage current of 2µA at a rated reverse voltage. The working principle of TZMA6V2-GS08 is based on its PN junction diode which is connected in reverse bias.