UGB12JT-E3/81 Allicdata Electronics
Allicdata Part #:

UGB12JT-E3/81-ND

Manufacturer Part#:

UGB12JT-E3/81

Price: $ 0.77
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE GEN PURP 600V 12A TO263AB
More Detail: Diode Standard 600V 12A Surface Mount TO-263AB
DataSheet: UGB12JT-E3/81 datasheetUGB12JT-E3/81 Datasheet/PDF
Quantity: 1000
800 +: $ 0.69017
Stock 1000Can Ship Immediately
$ 0.77
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Last Time Buy
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 12A
Voltage - Forward (Vf) (Max) @ If: 1.75V @ 12A
Speed: Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 30µA @ 600V
Capacitance @ Vr, F: --
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB
Operating Temperature - Junction: -55°C ~ 150°C
Description

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Diodes, also known as rectifying diodes, are two-terminal components that are typically used as a rectifier to convert alternating current (AC) to direct current (DC). The UGB12JT-E3/81 diode is a fast, medium-action diode with low operation and forward voltage drop. It is a single diode, meaning it is formed from one junction of two types of semiconductor material.

Application Field of UGB12JT-E3/81 Diodes

UGB12JT-E3/81 diodes can be used for switching applications and are particularly suitable for isolator or gate drive applications. They are also suitable for use in power supplies, radio transmitters and receivers, and various kinds of switching circuits. The diodes can be used as rectifiers to convert AC to DC and to protect circuits from reverse currents. Additionally, they are used in braking and rectifier circuits, switching circuits, and high-voltage surge protection applications.

Working Principle of UGB12JT-E3/81 Diodes

In both a forward and a reverse bias, the UGB12JT-E3/81 diodes protect the circuit from high voltage. When it is biased in a forward direction, the diode allows the current to flow from its anode to its cathode in a single direction, and when it is biased in a reverse direction, the diode will not allow any current to flow between the two terminals. This is because the diode uses the PN junction formed by two types of semiconductor material to prevent current from flowing in the opposite direction.

The UGB12JT-E3/81 diodes also have a low forward voltage drop and a low operation temperature, which helps keep the diode working at low temperatures. Additionally, they are capable of operating at high frequencies and are resistant to thermal runaway. This helps prolong the life of the diode and increase its efficiency.

Conclusion

The UGB12JT-E3/81 is a single diode that is used for converting AC to DC, protecting circuits from high voltage, and performing switching and rectifier functions. It has a low forward voltage drop and a low operating temperature and can be effectively used in power supplies, radio transmitters and receivers, and various kinds of switching circuits. Additionally, it is resistant to thermal runaway, helping prolong its life and increase its efficiency.

The specific data is subject to PDF, and the above content is for reference

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