Allicdata Part #: | UGF2005GHC0G-ND |
Manufacturer Part#: |
UGF2005GHC0G |
Price: | $ 0.30 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | DIODE ARRAY GP 300V ITO-220AB |
More Detail: | Diode Array 1 Pair Common Cathode Standard 300V 20... |
DataSheet: | UGF2005GHC0G Datasheet/PDF |
Quantity: | 1000 |
1000 +: | $ 0.27287 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tube |
Part Status: | Active |
Diode Configuration: | 1 Pair Common Cathode |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 300V |
Current - Average Rectified (Io) (per Diode): | 20A |
Voltage - Forward (Vf) (Max) @ If: | 1.25V @ 10A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 20ns |
Current - Reverse Leakage @ Vr: | 5µA @ 300V |
Operating Temperature - Junction: | -55°C ~ 175°C |
Mounting Type: | Through Hole |
Package / Case: | TO-220-3 Full Pack, Isolated Tab |
Supplier Device Package: | ITO-220AB |
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The UGF2005GHC0G device is a diode array switch module, which is widely used in various applications. The UGF2005GHC0G diode array consists of 16 individually and paralleled Schottky Barrier diodes, which are embedded in an insulated metal substrate. It is designed to provide low on-state forward voltage drop and high switching speeds, while maintaining high reliability and performance.
The UGF2005GHC0G diode array is used to protect ultra-sensitive equipment from over-current or over-voltage conditions. It can be used as a bidirectional protection switch for low current applications, such as for low power radio frequency signals. In addition, it is also commonly used in various automotive and industrial applications, such as switches and relays, as well as circuit protection, signal isolation, EMI/RFI noise reduction and current limiting.
The working principle of UGF2005GHC0G diode array is based on Schottky Barrier diodes. In order to better understand the working principle of the UGF2005GHC0G diode array, it is necessary to first understand the basic principle of Schottky Barrier diodes. Schottky diodes are formed when a metal and a semiconductor are in close contact with each other. The semiconductor forms a depletion layer at the junction, which is basically a region where no electrons or holes can move freely. When the Schottky barrier is forward biased, electrons from the semiconductor are attracted by the metal and are injected into the metal, resulting in a current flow through the diode. When the Schottky barrier is reverse biased, the depletion layer thickens, greatly reducing the current flow.
The UGF2005GHC0G diode array utilizes the Schottky Barrier diode\'s ability to conduct current in one direction while inhibiting the current flow in the reverse direction. It consists of sixteen parallel Schottky diodes in a single package. When a positive voltage is applied to the array, electrons flow from the semiconductor to the metal, resulting in a current flow. However, if a negative voltage is applied, the depletion layer thickens, inhibiting the current flow. This allows the UGF2005GHC0G diode array to be used for protection from voltage spikes or current surges.
The UGF2005GHC0G diode array is an extremely versatile device, which is able to operate both as a switch or a protection device. It is ideal for use in automotive, industrial, and telecom applications. The UGF2005GHC0G diode array is also extremely reliable, with a wide operating temperature range and an advanced heat dissipation system. With its many features and benefits, the UGF2005GHC0G diode array is a great choice for any application.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
UGF2004G C0G | Taiwan Semic... | 0.27 $ | 1000 | DIODE ARRAY GP 200V ITO-2... |
UGF2005G C0G | Taiwan Semic... | 0.27 $ | 1000 | DIODE ARRAY GP 300V ITO-2... |
UGF2007G C0G | Taiwan Semic... | 0.27 $ | 1000 | DIODE ARRAY GP 500V ITO-2... |
UGF2008G C0G | Taiwan Semic... | 0.27 $ | 1000 | DIODE ARRAY GP 600V ITO-2... |
UGF2004GHC0G | Taiwan Semic... | 0.3 $ | 1000 | DIODE ARRAY GP 200V ITO-2... |
UGF2005GHC0G | Taiwan Semic... | 0.3 $ | 1000 | DIODE ARRAY GP 300V ITO-2... |
UGF2006GHC0G | Taiwan Semic... | 0.3 $ | 1000 | DIODE ARRAY GP 400V ITO-2... |
UGF2007GHC0G | Taiwan Semic... | 0.3 $ | 1000 | DIODE ARRAY GP 500V ITO-2... |
UGF2008GHC0G | Taiwan Semic... | 0.3 $ | 1000 | DIODE ARRAY GP 600V ITO-2... |
UGF2006G C0G | Taiwan Semic... | 0.27 $ | 1000 | DIODE ARRAY GP 400V ITO-2... |
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