UGF2005GHC0G Allicdata Electronics
Allicdata Part #:

UGF2005GHC0G-ND

Manufacturer Part#:

UGF2005GHC0G

Price: $ 0.30
Product Category:

Discrete Semiconductor Products

Manufacturer: Taiwan Semiconductor Corporation
Short Description: DIODE ARRAY GP 300V ITO-220AB
More Detail: Diode Array 1 Pair Common Cathode Standard 300V 20...
DataSheet: UGF2005GHC0G datasheetUGF2005GHC0G Datasheet/PDF
Quantity: 1000
1000 +: $ 0.27287
Stock 1000Can Ship Immediately
$ 0.3
Specifications
Series: Automotive, AEC-Q101
Packaging: Tube 
Part Status: Active
Diode Configuration: 1 Pair Common Cathode
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 300V
Current - Average Rectified (Io) (per Diode): 20A
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 10A
Speed: Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr): 20ns
Current - Reverse Leakage @ Vr: 5µA @ 300V
Operating Temperature - Junction: -55°C ~ 175°C
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Supplier Device Package: ITO-220AB
Description

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The UGF2005GHC0G device is a diode array switch module, which is widely used in various applications. The UGF2005GHC0G diode array consists of 16 individually and paralleled Schottky Barrier diodes, which are embedded in an insulated metal substrate. It is designed to provide low on-state forward voltage drop and high switching speeds, while maintaining high reliability and performance.

The UGF2005GHC0G diode array is used to protect ultra-sensitive equipment from over-current or over-voltage conditions. It can be used as a bidirectional protection switch for low current applications, such as for low power radio frequency signals. In addition, it is also commonly used in various automotive and industrial applications, such as switches and relays, as well as circuit protection, signal isolation, EMI/RFI noise reduction and current limiting.

The working principle of UGF2005GHC0G diode array is based on Schottky Barrier diodes. In order to better understand the working principle of the UGF2005GHC0G diode array, it is necessary to first understand the basic principle of Schottky Barrier diodes. Schottky diodes are formed when a metal and a semiconductor are in close contact with each other. The semiconductor forms a depletion layer at the junction, which is basically a region where no electrons or holes can move freely. When the Schottky barrier is forward biased, electrons from the semiconductor are attracted by the metal and are injected into the metal, resulting in a current flow through the diode. When the Schottky barrier is reverse biased, the depletion layer thickens, greatly reducing the current flow.

The UGF2005GHC0G diode array utilizes the Schottky Barrier diode\'s ability to conduct current in one direction while inhibiting the current flow in the reverse direction. It consists of sixteen parallel Schottky diodes in a single package. When a positive voltage is applied to the array, electrons flow from the semiconductor to the metal, resulting in a current flow. However, if a negative voltage is applied, the depletion layer thickens, inhibiting the current flow. This allows the UGF2005GHC0G diode array to be used for protection from voltage spikes or current surges.

The UGF2005GHC0G diode array is an extremely versatile device, which is able to operate both as a switch or a protection device. It is ideal for use in automotive, industrial, and telecom applications. The UGF2005GHC0G diode array is also extremely reliable, with a wide operating temperature range and an advanced heat dissipation system. With its many features and benefits, the UGF2005GHC0G diode array is a great choice for any application.

The specific data is subject to PDF, and the above content is for reference

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