| Allicdata Part #: | UMG4N-7-ND |
| Manufacturer Part#: |
UMG4N-7 |
| Price: | $ 0.12 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Diodes Incorporated |
| Short Description: | TRANS 2NPN PREBIAS 0.15W SOT353 |
| More Detail: | Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Bi... |
| DataSheet: | UMG4N-7 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | $ 0.12000 |
| 10 +: | $ 0.11640 |
| 100 +: | $ 0.11400 |
| 1000 +: | $ 0.11160 |
| 10000 +: | $ 0.10800 |
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| Transistor Type: | 2 NPN - Pre-Biased (Dual) |
| Current - Collector (Ic) (Max): | 100mA |
| Voltage - Collector Emitter Breakdown (Max): | 50V |
| Resistor - Base (R1): | 10 kOhms |
| Resistor - Emitter Base (R2): | -- |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 1mA, 5V |
| Vce Saturation (Max) @ Ib, Ic: | 300mV @ 1mA, 10mA |
| Current - Collector Cutoff (Max): | -- |
| Frequency - Transition: | 250MHz |
| Power - Max: | 150mW |
| Mounting Type: | Surface Mount |
| Package / Case: | 5-TSSOP, SC-70-5, SOT-353 |
| Supplier Device Package: | SOT-353 |
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The UMG4N-7 is a device in the Arrays, Pre-Biased category that is part of a variety of Transistors - Bipolar (BJT) technologies. It is a multi-emitter device that is typically used to form a wide variety of discrete multi-emitter transistors, including the Darlington, super-Darlington, and cascode configurations.
The UMG4N-7 device is a multi-emitter transistor module that consists of seven individual NPN transistors connected to a monolithic substrate. These transistors are located close together in order to maximize the gain of each individual transistor. This enables the UMG4N-7 device to achieve very high levels of gain and power, making it an ideal solution for applications requiring high current and voltage. Additionally, the device utilizes a pre-biased architecture, which reduces the number of components required to configure the transistors. This further simplifies the design process, making the device a very cost-effective option.
In terms of operation, the UMG4N-7 device works by utilizing the combined voltage and current gain of each individual transistor in the array. This is done by connecting the two collector leads of each transistor to a common junction, which is also connected to a load. When the base of each transistor is stimulated by a voltage, the combined collector current of all seven transistors is fed back to the power supply, resulting in the desired output current and voltage.
The UMG4N-7 is ideal for a variety of applications, including high-speed switching, high-power amplifiers, and analog circuits. Its pre-biased configuration, high current and voltage capabilities, and low cost make it an attractive option for a variety of applications. Additionally, its flexibility makes it suitable for a wide range of custom configurations.
In summary, the UMG4N-7 is a multi-emitter transistor module that is part of a variety of Transistors - Bipolar (BJT) technologies. Its pre-biased configuration, high current and voltage capabilities, and low cost make it a very cost-effective solution for a variety of applications. It is also suitable for many custom configurations.
The specific data is subject to PDF, and the above content is for reference
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UMG4N-7 Datasheet/PDF