UMG4N-7 Allicdata Electronics
Allicdata Part #:

UMG4N-7-ND

Manufacturer Part#:

UMG4N-7

Price: $ 0.12
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: TRANS 2NPN PREBIAS 0.15W SOT353
More Detail: Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Bi...
DataSheet: UMG4N-7 datasheetUMG4N-7 Datasheet/PDF
Quantity: 1000
1 +: $ 0.12000
10 +: $ 0.11640
100 +: $ 0.11400
1000 +: $ 0.11160
10000 +: $ 0.10800
Stock 1000Can Ship Immediately
$ 0.12
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): --
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): --
Frequency - Transition: 250MHz
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Supplier Device Package: SOT-353
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The UMG4N-7 is a device in the Arrays, Pre-Biased category that is part of a variety of Transistors - Bipolar (BJT) technologies. It is a multi-emitter device that is typically used to form a wide variety of discrete multi-emitter transistors, including the Darlington, super-Darlington, and cascode configurations.

The UMG4N-7 device is a multi-emitter transistor module that consists of seven individual NPN transistors connected to a monolithic substrate. These transistors are located close together in order to maximize the gain of each individual transistor. This enables the UMG4N-7 device to achieve very high levels of gain and power, making it an ideal solution for applications requiring high current and voltage. Additionally, the device utilizes a pre-biased architecture, which reduces the number of components required to configure the transistors. This further simplifies the design process, making the device a very cost-effective option.

In terms of operation, the UMG4N-7 device works by utilizing the combined voltage and current gain of each individual transistor in the array. This is done by connecting the two collector leads of each transistor to a common junction, which is also connected to a load. When the base of each transistor is stimulated by a voltage, the combined collector current of all seven transistors is fed back to the power supply, resulting in the desired output current and voltage.

The UMG4N-7 is ideal for a variety of applications, including high-speed switching, high-power amplifiers, and analog circuits. Its pre-biased configuration, high current and voltage capabilities, and low cost make it an attractive option for a variety of applications. Additionally, its flexibility makes it suitable for a wide range of custom configurations.

In summary, the UMG4N-7 is a multi-emitter transistor module that is part of a variety of Transistors - Bipolar (BJT) technologies. Its pre-biased configuration, high current and voltage capabilities, and low cost make it a very cost-effective solution for a variety of applications. It is also suitable for many custom configurations.

The specific data is subject to PDF, and the above content is for reference

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