UNR521000L Allicdata Electronics

UNR521000L Discrete Semiconductor Products

Allicdata Part #:

UNR521000LTR-ND

Manufacturer Part#:

UNR521000L

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Panasonic Electronic Components
Short Description: TRANS PREBIAS NPN 150MW SMINI3
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: UNR521000L datasheetUNR521000L Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 150MHz
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SMini3-G1
Description

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AUNR521000L is a single pre-biased bipolar junction transistor (BJT) that is ideal for applications such as transistors switches, signal amplification and signal conditioning. These transistors are also an excellent choice for signal switching or signal regulation applications as they offer high speed, low power consumption and reduced heat dissipation. The UNR521000L has a base-emitter voltage of 30V, collector-emitter voltage of 60V and a collector-emitter leakage current of 100µA.

The UNR521000L incorporates a patented process technology that allows for the design of pre-biased transistors with a significant reduction in thermal dissipation and improved current gain. This process technology is based on the use of two thin gate-oxide layers which increases the field-effect mobility and allows for improved band gap shift. As a result, the transistor can achieve high speed switching and signal amplification with improved efficiency.

The UNR521000L is an ideal device for applications where fast switching is required. It has a speed rating of 25V/µs, which is several times faster than other transistors. This makes the transistor ideal for driving large loads, such as motors and lighting systems, as it can quickly switch between high and low states. The device also has a low turn-on voltage of 2V, which makes it suitable for low voltage applications.

The UNR521000L has a base-emitter voltage of 30V and can handle very high current densities. This allows it to be used in power applications, such as switching supplies, where higher currents need to be switched. The transistor can also be used in precision applications, such as signal conditioning, due to its low base-emitter voltage and excellent temperature stability.

The UNR521000L transistor is designed for very reliable operation. It has superior latch-up immunity and low static power dissipation. This makes it perfect for applications that require uninterrupted operation. The device also has excellent thermal and electrical performance, making it suitable for higher frequency applications.

The UNR521000L is a versatile and reliable transistor that is perfect for a wide range of applications. It has excellent current gain and can be used in low voltage or high voltage applications. It also has excellent speed, reliability, and thermal and electrical performance.

The specific data is subject to PDF, and the above content is for reference

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