VS-GA250SA60S Allicdata Electronics
Allicdata Part #:

VS-GA250SA60SGI-ND

Manufacturer Part#:

VS-GA250SA60S

Price: $ 57.30
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: IGBT 600V 400A SOT227
More Detail: IGBT Module Single 600V 400A 961W Chassis Mount S...
DataSheet: VS-GA250SA60S datasheetVS-GA250SA60S Datasheet/PDF
Quantity: 242
1 +: $ 52.09470
10 +: $ 49.48840
25 +: $ 48.18620
100 +: $ 44.60480
Stock 242Can Ship Immediately
$ 57.3
Specifications
Series: --
Part Status: Active
IGBT Type: --
Configuration: Single
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 400A
Power - Max: 961W
Vce(on) (Max) @ Vge, Ic: 1.66V @ 15V, 200A
Current - Collector Cutoff (Max): 1mA
Input Capacitance (Cies) @ Vce: 16.25nF @ 30V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4
Supplier Device Package: SOT-227
Description

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VS-GA250SA60S Application Field and Working Principle

The VS-GA250SA60S is a part of a family of IGBT Modules, designed and manufactured by Vishay Intertechnology. These advanced modules offer outstanding performance and reliability in a wide range of applications, providing performance and excellence while significantly reducing size and weight. Its use also helps improve reliable operation of key systems.

Application Field and Feature

The VS-GA250SA60S is available in a variety of configurations and is ideally suited for use in a wide range of applications, including electric traction, switch mode power supply, industrial motor drives and home appliance. Because of its high efficiency and long life, the VS-GA250SA60S is typically used in applications requiring high operating voltages and current.

The VS-GA250SA60S IGBT module offers a variety of features for its use in applications. These include a maximum operating voltage of 600V, a rated current of 250A, a very low power dissipation, high reliability and excellent electrical efficiency. The extremely low on-state voltage VCE of 1.7V and the high-functional temperature range of -40°C to +130°C also make the VS-GA250SA60S a great choice for use in power applications.

Working Principle

The VS-GA250SA60S IGBT utilizes the principle of an insulated gate bipolar transistor (IGBT), an advanced transistors device with excellent thermal, electrical and dynamic characteristics. It is a power semiconductor designed to facilitate switching operations in a wide variety of applications requiring high efficiency and/or high current. Basically, this transistor is made up of 3 terminals: a collector, an emitter and a gate.

When a positive voltage is applied to the gate of the VS-GA250SA60S, it turns on and can then act on the collector current, allowing a current to flow between the collector and the emitter. Since the gate is insulated from the other two terminals by a thin film of insulating material, it is able to operate at low voltage, and can be turned on quickly and accurately with a minimum of power.

When the flow of current is completed, the VS-GA250SA60S IGBT can be switched off quickly and accurately with a minimum of power, allowing the device to be used in a variety of applications requiring reliable and efficient power management. As a result of its inherent reliability and efficiency, it is used for various applications ranging from motor drives to home appliances.

The specific data is subject to PDF, and the above content is for reference

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