VS-GB100TP120N

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VS-GB100TP120N Application Field and Working Principle

Transistors - IGBTs - Modules

VS-GB100TP120N is a power module available in our VS-GB series of Industrial Grade Insulated Gate Bipolar Transistors (IGBT). It is designed for welding applications, thanks to its insulated and sealed dielectric construction. The device’s high efficiency, reliability, and long-term stability make it ideal for such applications, and it is ideal for applications with pulse width modulation (PWM) Square Wave or Sinusoidal Waveform Output.

The high efficiency of the VS-GB100TP120N is achieved by its advanced gate driving techniques, enabling the IGBT’s switching frequency to reach up to 20kHz. To provide better protection and thermal dissipation, a built-in Integrated Heat Sink (IHS) was integrated into the module’s design. Furthermore, the IGBT’s integrated gate control (GCT) provides superior control, and its unbiased Collector-Emitter Voltage (VCE) operation amplifies its power efficiency.

The device’s open base connection design makes it extremely easy to install, and it is suitable for use in welding, converters, switching power supplies and other industrial automation applications. It features a robust design for rugged industrial applications, including protection against over-voltage, over-temperature, over-current, and reverse-polarity. It also has a three-phase thyristor control, allowing it to be used with a wide range of power sources, including pulse generators and motor inverters.

An important feature of this IGBT power module is its PWM modulation range, which is adjustable from 0.1kHz to 15kHz. This allows the user to accurately adjust the power output of the module and make sure it matches the specific requirements of the application. In addition, all of the operation parameters and protection functions of the module are digitally programmable, meaning that the performance of the module can be adjusted according to the specific needs of the application.

The working principle of the VS-GB100TP120N is as follows: it starts by receiving a gate control (GC) signal from the gate driver circuit. Then, the IGBT cuts off the load current by turning the gate off. When the GC signal is re-triggered, the voltage across the IGBT is decreased, causing the current through the IGBT to switch on. This process is continuously repeated as long as the GC signal is present.

In addition, the IGBT also includes a low energy impedance switching system, which helps to increase the power efficiency of the module. The IGBT utilizes current sensing to activate the switch when the load current increases, allowing the maximum power output to be achieved without reducing the power efficiency. This system also helps to reduce the switching losses of the IGBT, thereby improving the overall power efficiency.

The VS-GB100TP120N provides superior power efficiency, high reliability, and long-term stability, while also providing advanced protection functions and programmable parameters. Its ease of install and IGBT’s built-in Integrated Heat Sink (IHS) make it a superior device for applications requiring pulse width modulation (PWM) Square Wave or Sinusoidal Waveform Output. Its high power efficiency, combined with its programmable parameters and protection features, makes it an ideal choice for many industrial automation applications.

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