VS-GB55LA120UX Allicdata Electronics
Allicdata Part #:

VS-GB55LA120UX-ND

Manufacturer Part#:

VS-GB55LA120UX

Price: $ 21.20
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: IGBT 1200V 55A LS CHOPPER SOT227
More Detail: IGBT Module NPT Single 1200V 84A 431W Chassis Moun...
DataSheet: VS-GB55LA120UX datasheetVS-GB55LA120UX Datasheet/PDF
Quantity: 1000
160 +: $ 19.27160
Stock 1000Can Ship Immediately
$ 21.2
Specifications
Series: HEXFRED®
Part Status: Active
IGBT Type: NPT
Configuration: Single
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 84A
Power - Max: 431W
Current - Collector Cutoff (Max): 50µA
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: SOT-227
Description

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The VS-GB55LA120UX module is an insulated gate bi-polar transistor (IGBT) belonging to the family of transistors. It is an electronic component that has high input impedance, high output impedance and an overall very low power consumption. It is suitable for a wide range of high-current applications and has become a popular choice for many types of analog and digital circuits. The common applications of the VS-GB55LA120UX module includes but is not limited to motor control, power conversion, renewable energy applications and DC-AC inverters.

The VS-GB55LA120UX module is a highly efficient device, capable of providing high power density and low loss. It is a four-pin dual terminal device. The two outer pins are known as the collector pins, while the two inner pins are termed as the emitter pins. This type of IGBT requires a gate driver to activate the device. Thus, a small voltage needs to be applied to the gate, typically in the range of 5 to 15V, in order to initiate conduction.

The working principle of the VS-GB55LA120UX module involves the modulation of power through the emitter and collector pins when a gate voltage pulse is applied. A voltage source is connected to the emitter and the collector. When the gate voltage is applied, electrons are drawn from the emitter towards the collector and then back again away from the collector. This creates a current to flow from the collector to the emitter, allowing power to be transferred from the voltage source to the load.

The gate and collector voltage are used to control the power flow between the collector and emitter. As the gate voltage drops below the collector voltage, the electrons start to flow away from the collector, reducing the current flow and thus reducing the power to the load. This helps to reduce the overall power losses in the device and increase its efficiency.

The VS-GB55LA120UX module is well suited for high power applications such as motor control, power conversion and DC-AC inverter circuits. It is capable of providing very high power conversion efficiency and is designed to reduce losses in the device due to its low on-state resistance. The VS-GB55LA120UX module is also suitable for renewable energy applications due to its ability to operate in a wide range of temperatures.

In conclusion, the VS-GB55LA120UX module is an important member of the IGBT family, capable of providing highly efficient power conversion with minimal losses. It is well suited for high power applications and can be used in a wide variety of applications such as motor control, power conversion and DC-AC inverters. It is an ideal choice for renewable energy applications due to its excellent operation in a wide range of temperatures.

The specific data is subject to PDF, and the above content is for reference

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