| Allicdata Part #: | VS-GB75SA120UP-ND |
| Manufacturer Part#: |
VS-GB75SA120UP |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Semiconductor Diodes Division |
| Short Description: | MODULE IGBT SOT-227 |
| More Detail: | IGBT Module NPT Single 1200V 658W Chassis Mount S... |
| DataSheet: | VS-GB75SA120UP Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | -- |
| Part Status: | Obsolete |
| IGBT Type: | NPT |
| Configuration: | Single |
| Voltage - Collector Emitter Breakdown (Max): | 1200V |
| Power - Max: | 658W |
| Vce(on) (Max) @ Vge, Ic: | 3.8V @ 15V, 75A |
| Current - Collector Cutoff (Max): | 250µA |
| Input: | Standard |
| NTC Thermistor: | No |
| Operating Temperature: | -40°C ~ 150°C (TJ) |
| Mounting Type: | Chassis Mount |
| Package / Case: | SOT-227-4, miniBLOC |
| Supplier Device Package: | SOT-227 |
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The VS-GB75SA120UP is an insulated-gate-bipolar-transistor (IGBT) module. IGBT modules combine amplifying, switching and power handling capabilities into a single device. The VS-GB75SA120UP, manufactured by Fuji Electric, is a six-pack device, with six dual IGBT\'s, each with a reverse-connected ultrafast diode, which are designed to save space and reduce the number of components needed. The VS-GB75SA120UP has widespread industrial applications and can be found in a range of industries, from automotive to robotics and industrial automation.
The VS-GB75SA120UP utilizes V-MOS technology that allows for excellent switching performance and low losses. This makes it ideal for high-frequency switching applications such as inverter circuits and variable-speed motor control. It also has fast-switching capabilities, which make it suitable for soft-switching applications, such as UPS systems and solar power generation. In addition, the VS-GB75SA120UP has high-current capability and excellent thermal characteristics, making it ideal for demanding applications.
The working principle of the VS-GB75SA120UP is primarily that of an insulated gate bipolar transistor (IGBT). IGBTs work by using a pair of gate electrodes to control the flow of current between the emitter and collector. The gate electrodes witch the current on and off by altering the voltage on the gate terminal. This controls the flow of current in the reverse direction, while negative voltage is applied to the collector in order to deactivate the device. The IGBT module also contains protective circuitry to prevent overcurrent and overvoltage conditions.
The VS-GB75SA120UP is suitable for a wide range of power conversion applications, including inverters, motor drives, UPS systems and solar power generation. It is rated for 0.75kV and is able to handle up to 1200A. The VS-GB75SA120UP is also suitable for applications that require fast switching and high-efficiency power conversion. It can operate at frequencies up to 20 kHz, which makes it suitable for high-frequency switching applications. In addition, its excellent thermal characteristics ensure that it is able to dissipate heat effectively.
The VS-GB75SA120UP is a versatile module that is well suited to a range of power conversion applications. Its combination of fast switching performance, low losses and high-current capability make it ideal for demanding power conversion applications. In addition, its excellent thermal characteristics make it capable of dissipating heat efficiently, ensuring reliable operation in high-frequency applications.
The specific data is subject to PDF, and the above content is for reference
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VS-GB75SA120UP Datasheet/PDF