VS-GT180DA120U Allicdata Electronics
Allicdata Part #:

VS-GT180DA120U-ND

Manufacturer Part#:

VS-GT180DA120U

Price: $ 32.67
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: IGBT 1200V SOT-227
More Detail: IGBT Module Trench Field Stop Single 1200V 281A 10...
DataSheet: VS-GT180DA120U datasheetVS-GT180DA120U Datasheet/PDF
Quantity: 1000
1 +: $ 29.69820
10 +: $ 27.70610
25 +: $ 26.54470
100 +: $ 24.05610
250 +: $ 23.22660
Stock 1000Can Ship Immediately
$ 32.67
Specifications
Series: HEXFRED®
Part Status: Active
IGBT Type: Trench Field Stop
Configuration: Single
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 281A
Power - Max: 1087W
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 100A
Current - Collector Cutoff (Max): 100µA
Input Capacitance (Cies) @ Vce: 9350pF @ 25V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: SOT-227
Description

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Transistors - IGBTs - Modules

VS-GT180DA120U Application Field and Working Principle

VS-GT180DA120U, a power module manufactured by Fuji Electric, is an advanced Insulated Gate Bipolar Transistor (IGBT) module. It is a fully shielded IGBT module equipped with high-speed switching diodes and advanced gate drive techniques. VS-GT180DA120U is widely used in a variety of applications, such as motor control, PV inverters, UPS systems, and induction heating.This powerful module is designed to deliver high-performance output with minimal current ripple. It has a breakdown voltage of 1200 V, peak voltage of 1800 V, continuous current of 180 A, and a maximum power rating of 216 kW. Additionally, this module features a power loss rating of 2 kW and a high-frequency operating frequency of 20 kHz. VS-GT180DA120U is designed to operate in temperatures ranging from -40 to +125 °C.This component has a simple but effective working mechanism. It comprises two silicon semiconductor layers between two electric plates. The semiconductor layers are made of a non-conductive material and contain several electronic components and switches which can be electrically operated by triggering the gate.The two electric plates form two bridges, one at the top and the other at the bottom. To create a bridge conduction path, a voltage (VCE) is applied to one side of the bottom electric plate. This causes a popping sound when activated and generates heat. Due to the insulation of the non-conductive material, the heat is limited to the two plates.The two plates also contain the gate electrode and a driver circuit. The driver circuit is connected to the gate and sends a control voltage to the gate of the IGBT, which controls the current flow through the IGBT. When a voltage is applied to the gate, the IGBT module turns on and allows the current to flow from one plate to the other.The IGBT module then can be used to control the power supply of any device, such as a motor or a power supply unit. This allows for precise control over the amount of power being supplied to the device, allowing for greater efficiency and performance.VS-GT180DA120U can be used in the following applications:• Motor control• Variable frequency drives (VFDs)• Uninterruptible power supplies (UPSs)• Power conditioning units (PCU)• Inverters• Induction heating• High power switching• Photovoltaic (PV) inverter designs• Soft-switching• Low output rippleVS-GT180DA120U is an advanced power module that delivers superior performance with minimal current ripple. It is highly used in applications such as motor control, UPS systems, and induction heating and is great for those looking for a reliable power module for their application.

The specific data is subject to PDF, and the above content is for reference

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