VS-GT300YH120N

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

VS-GT300YH120N Application Field and Working Principle

VS-GT300YH120N is a type of insulated gate bipolar transistor (IGBT) module produced by Vishay Semiconductor. It has a separate base and collector connections, compared to a traditional power transistor, making it more suitable for power switching applications. The insulated gate allows the gate-controlled DC current to flow through the base-collector region, enabling accurate on and off switching of the transistor.

Features of VS-GT300YH120N

• Low on-state voltage drop
• High input capacitance
• High current carrying capability
• High switching speed
• High power dissipation capability

Applications of VS-GT300YH120N

VS-GT300YH120N is suitable for switching applications involving high currents, such as motor control, power supply, and converter systems. The device can also be used for driving high power audio systems and for resonant circuit applications. In solar inverter and other high power switching applications, VS-GT300YH120N can also provide superior efficiency and power density due to its low on-state voltage drop.

Working Principle of VS-GT300YH120N

VS-GT300YH120N is an IGBT module that uses two distinct technologies, namely the insulated gate field effect transistor (IGFET) and the bipolar transistor. The device operates on the principle of a standardized power semiconductor that combines the conductance control of an electrode and the voltage control of an electrode with the ability to control a large current. The device uses the principle of minority carrier injection to create an avalanche breakdown in which electrons and holes are generated due to their large potential difference. This effects allows a high voltage and current to flow through the device, allowing it to control the flow of power.

When a voltage is applied to the gate terminal, the electrons and holes injected in the base-collector region flow towards the emitter and collector, respectively. This is called the forward conduction mode. When the voltage is reversed, the electrons and holes flow in the opposite directions. This is the reverse conduction mode. In the forward conduction mode, the drain current remains in the same direction, i.e. flowing from the drain to the source. In the reverse conduction mode, the drain current flows in the opposite direction, i.e. from the source to the drain.

To reduce the power dissipation of the device, it is designed with a low on-state voltage drop. This reduces the amount of power dissipated during the operation, making it highly reliable and efficient. As the voltage drop is reduced, current gain is also improved, allowing the device to control large currents.

Conclusion

VS-GT300YH120N is a type of insulated gate bipolar transistor (IGBT) module produced by Vishay Semiconductor. It has low on-state voltage drop and high switching speed, which allows it to be used in a variety of applications in motor control, solar inverter, power supply, and converter systems. Its working principle is based on the injection of electrons and holes into the base-collector region, allowing it to control a large current.

The specific data is subject to PDF, and the above content is for reference