Allicdata Part #: | W971GG8SB-25-ND |
Manufacturer Part#: |
W971GG8SB-25 |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Winbond Electronics |
Short Description: | IC DRAM 1G PARALLEL 60WBGA |
More Detail: | SDRAM - DDR2 Memory IC 1Gb (128M x 8) Parallel 200... |
DataSheet: | W971GG8SB-25 Datasheet/PDF |
Quantity: | 133 |
Series: | -- |
Packaging: | Tray |
Part Status: | Active |
Memory Type: | Volatile |
Memory Format: | DRAM |
Technology: | SDRAM - DDR2 |
Memory Size: | 1Gb (128M x 8) |
Clock Frequency: | 200MHz |
Write Cycle Time - Word, Page: | 15ns |
Access Time: | 400ps |
Memory Interface: | Parallel |
Voltage - Supply: | 1.7 V ~ 1.9 V |
Operating Temperature: | 0°C ~ 85°C (TC) |
Mounting Type: | Surface Mount |
Package / Case: | 60-TFBGA |
Supplier Device Package: | 60-WBGA (8x12.5) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Memory is the most important component in any computer system. It stores everything from user data to instructions that the processor needs to execute. Memory can be broken down into many different types, with RAM, ROM, and Non-volatile RAM being the three main classes. Within these classes, there are further subdivisions, such as SRAM, DRAM, and Flash Memory. Each of these memory types has specific features and unique applications.
The W971GG8SB-25 is a type of Non-volatile RAM (NVRAM), which is known for its ability to store data even when the power is removed. This makes it a great choice for applications that require data to persist after a power cycle, such as restoring settings in consumer electronics, or for keeping track of a process state in industrial equipment. The W971GG8SB-25 is also designed to extend battery life, as it consumes very little energy when idle.
The W971GG8SB-25 utilizes a circuit design based on a Flash technique called “Cell-Level Redundant Programming”. This design eliminates the need for external redundancy, allowing for a higher level of data integrity, as well as a more efficient delocalization process for the data stored within its cells. With a write endurance of 1 million cycles, the device can be used for systems that need to write to memory frequently, such as automotive control systems. It can also operate at temperatures up to 105 degrees Celsius, making it suitable for industrial applications.
In terms of application field, the W971GG8SB-25 is ideal for use in medical, communications, industrial, automotive, or consumer applications. It can be used in embedded systems that require data to be retained after power cycles, as well as in applications that write to memory frequently or demand a high level of data integrity. The device\'s low standby power consumption also makes it suitable for mobile applications where long battery life is a priority.
The working principle of the W971GG8SB-25 is based on its Flash cell structure, which leverages a voltage to store the physical memory state of the individual cells. The device operates in either a write or read mode, and uses an algorithm to identify which cells need to be accessed for a given action. Once the target cells have been identified, the device performs the data transfer, depending on whether it is in read or write mode. Once the memory transaction is complete, the device powers down to a low standby current.
In summary, the W971GG8SB-25 is a type of Non-volatile RAM that is ideal for applications that need to persist data after power cycles, and for those that demand a higher level of data integrity. This memory type can be used in a wide range of applications, from medical to automotive, and leverages a cell structure based on Flash technology to store data. It also boasts low power requirements and high temperature tolerance, which make it an attractive choice for mobile or industrial systems.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
W9712G6KB-25 | Winbond Elec... | -- | 213 | IC DRAM 128M PARALLEL 84T... |
W971GG6SB-25 TR | Winbond Elec... | 2.55 $ | 1000 | IC DRAM 1G PARALLEL 84WBG... |
W971GG6SB-25 | Winbond Elec... | -- | 1439 | IC DRAM 1G PARALLEL 84WBG... |
W971GG6SB25I | Winbond Elec... | -- | 459 | IC DRAM 1G PARALLEL 84WBG... |
W971GG6SB-18 | Winbond Elec... | -- | 791 | IC DRAM 1G PARALLEL 84WBG... |
W971GG8SB-25 | Winbond Elec... | -- | 133 | IC DRAM 1G PARALLEL 60WBG... |
W971GG6KB-18 TR | Winbond Elec... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 84WBG... |
W971GG6KB-25 TR | Winbond Elec... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 84WBG... |
W971GG6KB25I TR | Winbond Elec... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 84WBG... |
W971GG8KB-25 TR | Winbond Elec... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 60WBG... |
W971GG8KB25I TR | Winbond Elec... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 60WBG... |
W971GG8JB-25 | Winbond Elec... | -- | 1000 | IC DRAM 1G PARALLEL 60WBG... |
W971GG6KB-18 | Winbond Elec... | -- | 1000 | IC DRAM 1G PARALLEL 84WBG... |
W971GG6KB-25 | Winbond Elec... | -- | 1000 | IC DRAM 1G PARALLEL 84WBG... |
W971GG6KB25I | Winbond Elec... | -- | 1000 | IC DRAM 1G PARALLEL 84WBG... |
W971GG8KB-25 | Winbond Elec... | -- | 1000 | IC DRAM 1G PARALLEL 60WBG... |
W971GG8KB25I | Winbond Elec... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 60WBG... |
W971GG8JB25I | Winbond Elec... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 60WBG... |
W9712G6KB-25 TR | Winbond Elec... | 1.3 $ | 1000 | IC DRAM 128M PARALLEL 84T... |
W9712G6KB25I TR | Winbond Elec... | 1.65 $ | 1000 | IC DRAM 128M PARALLEL 84T... |
W9712G6KB25I | Winbond Elec... | 1.82 $ | 1000 | IC DRAM 128M PARALLEL 84T... |
W971GG6SB-18 TR | Winbond Elec... | 2.55 $ | 1000 | IC DRAM 1G PARALLEL 84WBG... |
W971GG8SB-25 TR | Winbond Elec... | 2.55 $ | 1000 | IC DRAM 1G PARALLEL 60WBG... |
W971GG8SB25I | Winbond Elec... | -- | 1000 | IC DRAM 1G PARALLEL 60WBG... |
W971GG6SB25I TR | Winbond Elec... | 3.12 $ | 1000 | IC DRAM 1G PARALLEL 84WBG... |
W971GG8SB25I TR | Winbond Elec... | 3.12 $ | 1000 | IC DRAM 1G PARALLEL 60WBG... |
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