XP0487800L Discrete Semiconductor Products |
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Allicdata Part #: | XP0487800LTR-ND |
Manufacturer Part#: |
XP0487800L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | MOSFET 2N-CH 50V 0.1A S-MINI-6P |
More Detail: | Mosfet Array 2 N-Channel (Dual) 50V 100mA 150mW Su... |
DataSheet: | XP0487800L Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 50V |
Current - Continuous Drain (Id) @ 25°C: | 100mA |
Rds On (Max) @ Id, Vgs: | 12 Ohm @ 10mA, 4V |
Vgs(th) (Max) @ Id: | 1.5V @ 1µA |
Gate Charge (Qg) (Max) @ Vgs: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 12pF @ 3V |
Power - Max: | 150mW |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: | SMINI6-G1 |
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XP0487800L array is a type transistor belonging to FETs and MOSFETs. It has been designed to obtain high linearity, high isolation, low insertion loss and good noise figure performance. As a result, it is currently regarded as one of the best transistors available in the market.
The XP0487800L array is mainly used as a power control element, such as in high power amplifier applications. In particular, the device is suitable for applications where the powers need to be delivered in the form of narrow pulse width signals. It can also be used in linear transceiver applications for linear RF digital signal processing.
The operation of the XP0487800L array is based on the principle of charge carriers, or electrons, which flow through the gate-source junction and then through the drain-source junction. To create a small but controlled current flow, the charge carrier density is made different across the gate-source junction, by applying a voltage to the gate. This voltage acts as a regulator and regulates the current flow. As the voltage applied to the gate increases, the majority charge carriers get decreased, resulting in a decrease in the current flow.
The XP0487800L array comprises several transistors connected in parallel. Each transistor consists of two back-to-back, insulated gate field-effect transistors (IGFETs), which can be controlled independently. The current flow between the drain and source is regulated by controlling the IGFETs. As the current is regulated in each individual transistor, the total current output of the array is realized by controlling the IGFETs symmetrically. In addition, the voltage applied to the gate is also controlled to ensure that the current output remains constant regardless of the load.
In order to optimize the performance of the XP0487800L array, it is important to determine the optimum gate voltage. This is a rather complex process and involves an analysis of the device’s characteristics, such as its DC current gain, linearity, input power level and noise figure. Other important considerations include the device’s stability under varying conditions, as well as its maximum power dissipation.
The XP0487800L array is an effective solution for applications that require high linearity and noise figure performance. It is easy to control and offers excellent power control in narrow pulse width applications. Moreover, it is designed to operate at high temperatures without compromising on its performance.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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