ZC832ATA Discrete Semiconductor Products |
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Allicdata Part #: | ZC832ATR-ND |
Manufacturer Part#: |
ZC832ATA |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | DIODE VAR CAP 22PF 25V SOT23-3 |
More Detail: | Varactor Single 25V Surface Mount SOT-23-3 |
DataSheet: | ZC832ATA Datasheet/PDF |
Quantity: | 1000 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Specifications
Series: | -- |
Packaging: | Tape & Reel (TR) |
Lead Free Status / RoHS Status: | -- |
Part Status: | Obsolete |
Moisture Sensitivity Level (MSL): | -- |
Capacitance @ Vr, F: | 24.2pF @ 2V, 1MHz |
Capacitance Ratio: | 6.5 |
Capacitance Ratio Condition: | C2/C20 |
Voltage - Peak Reverse (Max): | 25V |
Diode Type: | Single |
Q @ Vr, F: | 200 @ 3V, 50MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 |
Base Part Number: | ZC832A |
Description
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Diodes - Variable Capacitance (Varicaps, Varactors)A varactor diode, commonly referred to as a variable capacitance diode, is a two-terminal semiconductor device. It features a variable capacitance that is dependent on the voltage applied to the terminals. Varactors are used in tunable and voltage-controlled oscillators (VCOs), frequency multipliers, tuning circuits, mixers and other radio frequency (RF) and microwave applications. The ZC832ATA is a single-pole double-throw (SPDT) solution for controlling internal capacitance variation to optimize communication performance in remote sensing applications. It is a highly efficient and cost-effective device that is ideal for low-power frequency conversion, harmonic filtering, and other RF functions. The operating principle of the ZC832ATA is based on the variable capacitance behavior of bonded junction ultra-thin body (BJUT) P-N diodes. Essentially, the ZC832ATA takes advantage of the current-voltage (I-V) characteristics of BJUT devices to enable small variations in capacitance with applied bias. BJUT devices are constructed from P and N-type silicon and epitaxially grown to a thickness of 40 millimeters or less, enabling capacitance values with small variations over a wide range of voltages.The ZC832ATA can be used in a variety of high frequency applications, including wireless communications, broadcast, navigation, radars, transceivers and base stations. Additionally, the device can be integrated into cellular and digital subscriber line (DSL) communication systems, microwaves, and high energy physics experiments.Specifically, the ZC832ATA is an ultra-low capacitance BJUT diode that is designed to provide a high level of functional performance in moderate bandwidths. The device features an ultra-low, gate-controlled C60 voltage in the range of 0.4 pF to 14 pF with a maximum operating frequency of 8GHz. The ZC832ATA offers superior insertion loss characteristics and a low reverse leakage current. Moreover, the ZC832ATA is ideal for interference control in both two-way and point-to-point applications due to its low operating voltage requirement, wide frequency band, and robust design. The device also has excellent capacitance stability and an improved working reliability due to its low RDS(on). Additionally, the ZC832ATA can be easily integrated into existing systems, simplifying the design and integration process.In summary, the ZC832ATA is an ideal solution for controlling internal capacitance variation and optimizing communication performance in remote sensing applications. With its wide frequency band, robust design, reduced operating voltage, excellent insertion loss characteristics and improved stability, the device provides superior performance in high frequency applications such as wireless communications, broadcast, navigation, radars, transceivers and base stations.The specific data is subject to PDF, and the above content is for reference
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ZC834ATC | Diodes Incor... | 0.0 $ | 1000 | DIODE VARIABLE CAP SOT23-... |
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ZC835ATA | Diodes Incor... | 0.0 $ | 1000 | DIODE VAR CAP 68PF 25V SO... |
ZC836ATA | Diodes Incor... | 0.0 $ | 1000 | DIODE VAR CAP 100PF 25V S... |
ZC830ATC | Diodes Incor... | 0.0 $ | 1000 | DIODE VAR CAPACITANCE SOT... |
ZC830BTC | Diodes Incor... | 0.0 $ | 1000 | DIODE VAR CAPACITANCE SOT... |
ZC831ATC | Diodes Incor... | 0.0 $ | 1000 | DIODE VAR CAPACITANCE SOT... |
ZC831BNTA | Diodes Incor... | 0.0 $ | 1000 | DIODE VARIABLE CAP SOT23-... |
ZC831BNTC | Diodes Incor... | 0.0 $ | 1000 | DIODE VARIABLE CAP SOT23-... |
ZC831BTC | Diodes Incor... | 0.0 $ | 1000 | DIODE VARIABLE CAP SOT23-... |
ZC832ATC | Diodes Incor... | 0.0 $ | 1000 | DIODE VAR CAPACITANCE SOT... |
ZC832BTC | Diodes Incor... | 0.0 $ | 1000 | DIODE VARIABLE CAP SOT23-... |
ZC833ATC | Diodes Incor... | 0.0 $ | 1000 | DIODE VARIABLE CAP SOT23-... |
ZC833BNTA | Diodes Incor... | 0.0 $ | 1000 | DIODE VARIABLE CAP SOT23-... |
ZC833BNTC | Diodes Incor... | 0.0 $ | 1000 | DIODE VARIABLE CAP SOT23-... |
ZC833BTC | Diodes Incor... | 0.0 $ | 1000 | DIODE VARIABLE CAP SOT23-... |
ZC834BTC | Diodes Incor... | 0.0 $ | 1000 | DIODE VARIABLE CAP SOT23-... |
ZC835ATC | Diodes Incor... | 0.0 $ | 1000 | DIODE VAR CAPACITANCE SOT... |
ZC835BTC | Diodes Incor... | 0.0 $ | 1000 | DIODE VARIABLE CAP SOT23-... |
ZC836ATC | Diodes Incor... | 0.0 $ | 1000 | DIODE VAR CAPACITANCE SOT... |
ZC836BTC | Diodes Incor... | 0.0 $ | 1000 | DIODE VAR CAPACITANCE SOT... |
ZC830BTA | Diodes Incor... | 0.0 $ | 1000 | DIODE VAR CAP 10PF 25V SO... |
ZC831BTA | Diodes Incor... | 0.0 $ | 1000 | DIODE VAR CAP 15PF 25V SO... |
ZC832BTA | Diodes Incor... | -- | 1000 | DIODE VAR CAP 22PF 25V SO... |
ZC834BTA | Diodes Incor... | 0.0 $ | 1000 | DIODE VAR CAP 47PF 25V SO... |
ZC833BTA | Diodes Incor... | 0.0 $ | 1000 | DIODE VARACTOR CAP SOT23-... |
ZC835BTA | Diodes Incor... | 0.0 $ | 1000 | DIODE VARACTOR CAP SOT23-... |
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