ZTX455STZ Allicdata Electronics
Allicdata Part #:

ZTX455STZ-ND

Manufacturer Part#:

ZTX455STZ

Price: $ 0.16
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: TRANS NPN 140V 1A E-LINE
More Detail: Bipolar (BJT) Transistor NPN 140V 1A 100MHz 1W Thr...
DataSheet: ZTX455STZ datasheetZTX455STZ Datasheet/PDF
Quantity: 1000
2000 +: $ 0.15038
Stock 1000Can Ship Immediately
$ 0.16
Specifications
Series: --
Packaging: Tape & Box (TB) 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 140V
Vce Saturation (Max) @ Ib, Ic: 700mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Power - Max: 1W
Frequency - Transition: 100MHz
Operating Temperature: -55°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: E-Line-3, Formed Leads
Supplier Device Package: E-Line (TO-92 compatible)
Base Part Number: ZTX455
Description

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The ZTX455STZ is a single bipolar junction transistor (BJT), designed for use in amplification and switching applications. The device is designed for use in a variety of commercial and industrial applications, including amplifying, switching, power regulation, and surge protection.

The ZTX455STZ has a maximum power dissipation of 625 mW, and a maximum junction temperature of 150 degrees C. The device is capable of a maximum collector-emitter voltage of 45 volts and can handle a peak of up to 100 mA. It is also capable of providing an output impedance of 0.1k-ohm. The ZTX455STZ is also able to provide a high immunity to thermal and electrical transients, therefore making it a suitable device for use in high-temperature and pulse applications.

The ZTX455STZ is manufactured from a n-type silicon wafer with a minimum gain of 80. It has a maximum DC current gain of 200 and a maximum current gain of 600. The device is also able to provide a high level of noise suppression and an adequate power rating when compared to that of other bipolar junction transistor (BJT) types.

In terms of the working principle of the device, the ZTX455STZ utilizes the small-signal BJT structure, which is based on the controlling of current flow between the collector and the emitter. The bipolar electrical characteristics of the device allows it to be well-suited to the needs of power amplification and switching.The mechanism of operation of the device is centered around a small electrical control current that is used to control the flow of a larger current between the collector and the emitter. The current gain of the device is determined by the amount of current flow that is available at the base-collector junction. This current gain allows the device to amplify the small-signal input current to a larger voltage and/or current output.

Due to its ability for both current and voltage amplification, the ZTX455STZ is well-suited for a variety of power and voltage applications, including the regulation and control of power, transient protection, and switching. Furthermore, the device is capable of providing a low noise level, a high input impedance, and a low capacitance. Because of these characteristics, the ZTX455STZ makes an ideal device for many commercial and industrial applications.

The ZTX455STZ has been designed to meet the needs of commercial and industrial applications. The device has been manufactured using high-quality components, and is capable of being used in a range of voltage and current conditions. The device\'s high levels of performance and resilience, combined with its low cost and small size, make it an excellent choice for any application where voltage and current regulation is required.

The specific data is subject to PDF, and the above content is for reference

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ZTX453STOB Diodes Incor... 0.0 $ 1000 TRANS NPN 100V 1A E-LINEB...
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ZTX455STOB Diodes Incor... 0.0 $ 1000 TRANS NPN 140V 1A E-LINEB...
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ZTX455 Diodes Incor... 0.47 $ 14786 TRANS NPN 140V 1A E-LINEB...
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