ZVN2535ASTZ

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The ZVN2535ASTZ uses a vertical power MOSFET, which is an excellent choice for high current and high voltage applications. The ZVN2535ASTZ offers a simplified form factor, allowing for a more efficient use of space, weight and power than traditional horizontal devices. The MOSFET technology allows excellent thermal performance and lower power dissipation while meeting higher current and power requirements.

The ZVN2535ASTZ is a single-chip, avalanche-rated MOSFET, optimized for minimization of switching losses in DC-to-DC converters as well as other high current and high voltage applications. The device is designed to reduce ON resistance and switching losses by using a unique process, which combines the vertical diffusion of the P-channel vertical power MOSFET, with the improved electrical performance of the N-channel vertical power MOSFET.

The ZVN2535ASTZ features low switching and conduction losses, high speed switching, and a low gate drive power requirement. The device is capable of featuring high junction temperatures up to 175°C, wide voltage range from -55 V to 200 V, initial gate capacitance up to 13 nF, and RDS (on) up to 8 mOhm. Maximum avalanche energy of 150 mJ at 25A and junction capacitances of 900 pF are also possible with ZVN2535ASTZ.

At a general level, the working principle of the ZVN2535ASTZ utilizes a MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor), which is a voltage-controlled semiconductor device that is designed to amplify or switch electronic signals. The semiconductor is connected between the source and the drain, and when a gate bias is applied to the MOSFET, the channel between the source and drain opens, allowing the current to flow through it. The ZVN2535ASTZ effectively uses this principle, amplifying or switching current signals with much efficiency.

The ZVN2535ASTZ can be used for a variety of applications such as DC-DC converters, power supply designs, motor control circuits, linear regulator designs, and automotive applications. In addition to this, the device can also be used in applications such as power management systems, battery chargers, and display controllers. Features such as low-RDS(on), low switching losses and low gate charge, along with excellent thermal performance make the ZVN2535ASTZ an ideal choice for these applications.

The ZVN2535ASTZ is a single-chip, avalanche-rated MOSFET, optimized for minimization of switching losses in DC-to-DC converters and other high current and voltage applications. The device is designed for optimal performance with single or multiple supply configurations and is capable of featuring low switching and conduction losses, high speed switching, and a low gate drive power requirement. In addition, the ZVN2535ASTZ is capable of featuring high junction temperatures up to 175°C, wide voltage range from -55 V to 200 V, initial gate capacitance up to 13 nF, and RDS (on) up to 8 mOhm. The device is an ideal choice for high current and voltage applications, and is suitable for applications such as DC-DC converters, power supply designs, motor control circuits, linear regulator designs, and automotive applications. The device’s features make it an excellent choice for efficient electronic signal amplification or switching.

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