3-way logic multiplexer - Allicdata Electronics

Allicdata Part#	Mft.Part#	Company	Spec.	QTY.	Pricing(USD)
SSM6L16FETE85LF TR-ND	SSM6L16FETE85LF	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Not For New Designs FET Type: N and P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 100mA Rds On (Max) @ Id, Vgs: 3 Ohm @ 10mA, 4V Vgs(th) (Max) @ Id: 1.1V @ 0.1mA Input Capacitance (Ciss) (Max) @ Vds: 9.3pF @ 3V Power - Max: 150mW Operating Temperature: 150C (TA) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6 (1.6x1.6)	1000 Order	4000+: $0.0753
KGF6N05D-400-ND	KGF6N05D-400	Renesas Electronics America Inc.	View more Part Status: Last Time Buy FET Type: 2 N-Channel (Dual) Common Source FET Feature: Standard Drain to Source Voltage (Vdss): 5.5V Current - Continuous Drain (Id) @ 25C: 12A (Ta) Rds On (Max) @ Id, Vgs: 3 mOhm @ 6A, 4.5V Vgs(th) (Max) @ Id: 0.9V @ 250A Gate Charge (Qg) (Max) @ Vgs: 4nC @ 3.5V Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 5.5V Power - Max: 2.5W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: 20-UFLGA, CSP Supplier Device Package: 20-WLCSP (2.48x1.17)	1000 Order	1+: $0
SQJ204EP-T1_GE3 TR-ND	SQJ204EP-T1_GE3	Vishay Siliconix	View more Series: Automotive, AEC-Q101, TrenchFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Dual) Asymmetrical FET Feature: Standard Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25C: 20A (Tc), 60A (Tc) Rds On (Max) @ Id, Vgs: 8.3 mOhm @ 4A, 10V, 3 mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 1.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V, 50nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 6V, 3700pF @ 6V Power - Max: 27W (Tc), 48W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK SO-8 Dual Supplier Device Package: PowerPAK SO-8 Dual Asymmetric	1000 Order	3000+: $0.3591

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SSM6L16FETE85LF
TR-ND

SSM6L16FETE85LF

Toshiba Semiconductor and Storage

View more Packaging: Tape & Reel (TR)
Part Status: Not For New Designs
FET Type: N and P-Channel
FET Feature: Standard
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25C: 100mA
Rds On (Max) @ Id, Vgs: 3 Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id: 1.1V @ 0.1mA
Input Capacitance (Ciss) (Max) @ Vds: 9.3pF @ 3V
Power - Max: 150mW
Operating Temperature: 150C (TA)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: ES6 (1.6x1.6)

1000
Order

4000+:

$0.0753

KGF6N05D-400-ND

KGF6N05D-400

Renesas Electronics America Inc.

View more Part Status: Last Time Buy
FET Type: 2 N-Channel (Dual) Common Source
FET Feature: Standard
Drain to Source Voltage (Vdss): 5.5V
Current - Continuous Drain (Id) @ 25C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 3 mOhm @ 6A, 4.5V
Vgs(th) (Max) @ Id: 0.9V @ 250A
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 3.5V
Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 5.5V
Power - Max: 2.5W (Ta)
Operating Temperature: -55C ~ 150C (TJ)
Mounting Type: Surface Mount
Package / Case: 20-UFLGA, CSP
Supplier Device Package: 20-WLCSP (2.48x1.17)

1000
Order

1+:

SQJ204EP-T1_GE3
TR-ND

SQJ204EP-T1_GE3

Vishay Siliconix

View more Series: Automotive, AEC-Q101, TrenchFET
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: 2 N-Channel (Dual) Asymmetrical
FET Feature: Standard
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25C: 20A (Tc), 60A (Tc)
Rds On (Max) @ Id, Vgs: 8.3 mOhm @ 4A, 10V, 3 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 1.5V @ 250A
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V, 50nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 6V, 3700pF @ 6V
Power - Max: 27W (Tc), 48W (Tc)
Operating Temperature: -55C ~ 175C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK SO-8 Dual
Supplier Device Package: PowerPAK SO-8 Dual Asymmetric

1000
Order

3000+:

$0.3591

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