3.5v audio amplifier - Allicdata Electronics

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Allicdata Part#	Mft.Part#	Company	Spec.	QTY.	Pricing(USD)
APT53N60SC6-ND	APT53N60SC6	Microsemi Corporation	View more Packaging: Bulk Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 53A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 70 mOhm @ 25.8A, 10V Vgs(th) (Max) @ Id: 3.5V @ 1.72mA Gate Charge (Qg) (Max) @ Vgs: 154nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 4020pF @ 25V FET Feature: Super Junction Power Dissipation (Max): 417W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: D3Pak Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	1+: $0
AOD403L-ND	AOD403L	Alpha & Omega Semiconductor Inc.	View more Packaging: Bulk Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 15A (Ta), 70A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V, 20V Rds On (Max) @ Id, Vgs: 6 mOhm @ 20A, 20V Vgs(th) (Max) @ Id: 3.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V Vgs (Max): 25V Input Capacitance (Ciss) (Max) @ Vds: 5300pF @ 15V Power Dissipation (Max): 2.5W (Ta), 90W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	1+: $0
IPS70R360P7SAKM A1-ND	IPS70R360P7SAKM A1	Infineon Technologies	View more Series: CoolMOS P7 Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25C: 12.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 360 mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 3.5V @ 150A Gate Charge (Qg) (Max) @ Vgs: 16.4nC @ 10V Vgs (Max): 16V Input Capacitance (Ciss) (Max) @ Vds: 517pF @ 400V Power Dissipation (Max): 59.5W (Tc) Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO251 Package / Case: TO-251-3 Stub Leads, IPak	1556 Order	1+: $0.7497 75+: $0.5984 150+: $0.5236 525+: $0.4061 1050+: $0.3206
IPP50R399CPHKSA 1-ND	IPP50R399CPHKSA 1	Infineon Technologies	View more Series: CoolMOS Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 560V Current - Continuous Drain (Id) @ 25C: 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 399 mOhm @ 4.9A, 10V Vgs(th) (Max) @ Id: 3.5V @ 330A Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 890pF @ 100V Power Dissipation (Max): 83W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	1000 Order	500+: $0.7884
IPB065N10N3GATM A1-ND	IPB065N10N3GATM A1	Infineon Technologies	View more Series: OptiMOS Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 80A, 10V Vgs(th) (Max) @ Id: 3.5V @ 90A Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 4910pF @ 50V Power Dissipation (Max): 150W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK (TO-263AB) Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	1000+: $0.8538
IPN80R750P7ATMA 1TR-ND	IPN80R750P7ATMA 1	Infineon Technologies	View more Series: CoolMOS P7 Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25C: 7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 750 mOhm @ 2.7A, 10V Vgs(th) (Max) @ Id: 3.5V @ 140A Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 500V Power Dissipation (Max): 7.2W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT223 Package / Case: SOT-223-3	3000 Order	3000+: $0.3978
FCH130N60-ND	FCH130N60	ON Semiconductor	View more Series: SuperFET II Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 28A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 130 mOhm @ 14A, 10V Vgs(th) (Max) @ Id: 3.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 3590pF @ 380V Power Dissipation (Max): 278W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	261 Order	--
IPA60R950C6XKSA 1-ND	IPA60R950C6XKSA 1	Infineon Technologies	View more Series: CoolMOS Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 4.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 950 mOhm @ 1.5A, 10V Vgs(th) (Max) @ Id: 3.5V @ 130A Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 100V Power Dissipation (Max): 26W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO-220-FP Package / Case: TO-220-3 Full Pack	471 Order	1+: $0.9828 10+: $0.8707 100+: $0.6881 500+: $0.5337 1000+: $0.4213
IPU60R1K5CEAKMA 2-ND	IPU60R1K5CEAKMA 2	Infineon Technologies	View more Series: CoolMOS CE Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 3.1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 1.1A, 10V Vgs(th) (Max) @ Id: 3.5V @ 90A Gate Charge (Qg) (Max) @ Vgs: 9.4nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 100V Power Dissipation (Max): 49W (Tc) Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO251 Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	1000 Order	1500+: $0.1776
NVMFS5C468NWFT1 G-ND	NVMFS5C468NWFT1 G	ON Semiconductor	View more Series: Automotive, AEC-Q101 Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25C: 12A (Ta), 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 12 mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 3.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 7.9nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 25V Power Dissipation (Max): 3.5W (Ta), 28W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	1000 Order	1500+: $0.181
IPI100N08N3GHKS A1-ND	IPI100N08N3GHKS A1	Infineon Technologies	View more Series: OptiMOS Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25C: 70A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 10 mOhm @ 46A, 10V Vgs(th) (Max) @ Id: 3.5V @ 46A Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2410pF @ 40V Power Dissipation (Max): 100W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO262-3 Package / Case: TO-262-3 Long Leads, IPak, TO-262AA	1000 Order	1+: $0
IPA65R600C6XKSA 1-ND	IPA65R600C6XKSA 1	Infineon Technologies	View more Series: CoolMOS Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25C: 7.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 600 mOhm @ 2.1A, 10V Vgs(th) (Max) @ Id: 3.5V @ 210A Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 100V Power Dissipation (Max): 28W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220 Full Pack Package / Case: TO-220-3 Full Pack	1000 Order	1+: $0
IPP120N10S405AK SA1-ND	IPP120N10S405AK SA1	Infineon Technologies	View more Series: Automotive, AEC-Q101, OptiMOS Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 5.3 mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 3.5V @ 120A Gate Charge (Qg) (Max) @ Vgs: 91nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 6540pF @ 25V Power Dissipation (Max): 190W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	1000 Order	500+: $1.2463
NVB5404NT4GOSTR -ND	NVB5404NT4G	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Not For New Designs FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25C: 24A (Ta) Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 40A, 10V Vgs(th) (Max) @ Id: 3.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 125nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 32V Power Dissipation (Max): 5.4W (Ta), 254W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	800 Order	800+: $1.0162
DMT10H015LK3-13 DITR-ND	DMT10H015LK3-13	Diodes Incorporated	View more Series: Automotive, AEC-Q101 Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 15 mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 3.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 33.3nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1871pF @ 50V Power Dissipation (Max): 2.9W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	2500+: $0.3246
IPB60R385CPATMA 1TR-ND	IPB60R385CPATMA 1	Infineon Technologies	View more Series: CoolMOS Packaging: Tape & Reel (TR) Part Status: Last Time Buy FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 385 mOhm @ 5.2A, 10V Vgs(th) (Max) @ Id: 3.5V @ 340A Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 100V Power Dissipation (Max): 83W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	1000+: $0.8325
IPP60R165CPXKSA 1-ND	IPP60R165CPXKSA 1	Infineon Technologies	View more Series: CoolMOS Packaging: Tube Part Status: Not For New Designs FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 21A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 165 mOhm @ 12A, 10V Vgs(th) (Max) @ Id: 3.5V @ 790A Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 100V Power Dissipation (Max): 192W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO-220-3 Package / Case: TO-220-3	337 Order	1+: $3.2508 10+: $2.9024 100+: $2.3801 500+: $1.9273 1000+: $1.6254
IPU80R1K4P7AKMA 1-ND	IPU80R1K4P7AKMA 1	Infineon Technologies	View more Series: CoolMOS Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25C: 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 1.4A, 10V Vgs(th) (Max) @ Id: 3.5V @ 700A Gate Charge (Qg) (Max) @ Vgs: 10.05nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 500V FET Feature: Super Junction Power Dissipation (Max): 32W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO251-3 Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	325 Order	1+: $0.7182 10+: $0.6382 100+: $0.5044 500+: $0.3912 1000+: $0.3089
TK20A25DS5Q(M-N D	TK20A25D,S5Q(M	Toshiba Semiconductor and Storage	View more Series: -MOSVII Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25C: 20A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 100 mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 3.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2550pF @ 100V Power Dissipation (Max): 45W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack	1000 Order	1+: $0
785-1352-2-ND	AOD425	Alpha & Omega Semiconductor Inc.	View more Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 9A (Ta), 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Rds On (Max) @ Id, Vgs: 17 mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 3.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Vgs (Max): 25V Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 15V Power Dissipation (Max): 2.5W (Ta), 71W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	--
APT33N90JCCU3-N D	APT33N90JCCU3	Microsemi Corporation	View more Series: CoolMOS Packaging: Bulk Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25C: 33A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 120 mOhm @ 26A, 10V Vgs(th) (Max) @ Id: 3.5V @ 3mA Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 100V FET Feature: Super Junction Power Dissipation (Max): 290W (Tc) Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227 Package / Case: SOT-227-4, miniBLOC	1000 Order	1+: $0
NVMFS5C410NT3G- ND	NVMFS5C410NT3G	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Discontinued at Digi-Key FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 0.92 mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 3.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 6100pF @ 25V Power Dissipation (Max): 3.9W (Ta), 166W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN	1000 Order	1+: $0
ZVP4525E6TR-ND	ZVP4525E6TA	Diodes Incorporated	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25C: 197mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 3.5V, 10V Rds On (Max) @ Id, Vgs: 14 Ohm @ 200mA, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 3.45nC @ 10V Vgs (Max): 40V Input Capacitance (Ciss) (Max) @ Vds: 73pF @ 25V Power Dissipation (Max): 1.1W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-6 Package / Case: SOT-23-6	18000 Order	--
NTMFS5C450NT1GO STR-ND	NTMFS5C450NT1G	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25C: 24A (Ta), 102A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 3.5V @ 65A Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 25V Power Dissipation (Max): 3.6W (Ta), 68W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	3000 Order	1500+: $0.489
IPP60R160C6XKSA 1-ND	IPP60R160C6XKSA 1	Infineon Technologies	View more Series: CoolMOS Packaging: Tube Part Status: Not For New Designs FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 23.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 160 mOhm @ 11.3A, 10V Vgs(th) (Max) @ Id: 3.5V @ 750A Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1660pF @ 100V Power Dissipation (Max): 176W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO-220-3 Package / Case: TO-220-3	1000 Order	1+: $2.5704 10+: $2.2976 100+: $1.8839 500+: $1.5255 1000+: $1.2865
IPP030N10N3GXKS A1-ND	IPP030N10N3GXKS A1	Infineon Technologies	View more Series: OptiMOS Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 3 mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 3.5V @ 275A Gate Charge (Qg) (Max) @ Vgs: 206nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 14800pF @ 50V Power Dissipation (Max): 300W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO-220-3 Package / Case: TO-220-3	500 Order	1+: $4.1265 10+: $3.6836 100+: $3.0204 500+: $2.4458 1000+: $2.0627
NVMFS5C456NWFT1 G-ND	NVMFS5C456NWFT1 G	ON Semiconductor	View more Series: Automotive, AEC-Q101 Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25C: 20A (Ta), 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 35A, 10V Vgs(th) (Max) @ Id: 3.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 25V Power Dissipation (Max): 3.6W (Ta), 55W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	1000 Order	1500+: $0.2747
IPD65R950C6ATMA 1-ND	IPD65R950C6ATMA 1	Infineon Technologies	View more Series: CoolMOS C6 Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25C: 4.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 950 mOhm @ 1.5A, 10V Vgs(th) (Max) @ Id: 3.5V @ 200A Gate Charge (Qg) (Max) @ Vgs: 15.3nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 328pF @ 100V Power Dissipation (Max): 37W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	2500+: $0.3519
FCP190N60E-ND	FCP190N60E	ON Semiconductor	View more Series: SuperFET II Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 20.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 190 mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 3.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 82nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 3175pF @ 25V Power Dissipation (Max): 208W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	6 Order	--
IPD180N10N3GBTM A1TR-ND	IPD180N10N3GBTM A1	Infineon Technologies	View more Series: OptiMOS Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 43A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 18 mOhm @ 33A, 10V Vgs(th) (Max) @ Id: 3.5V @ 33A Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 50V Power Dissipation (Max): 71W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	1+: $0
NVMFS5C430NT3G- ND	NVMFS5C430NT3G	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Discontinued at Digi-Key FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.7 mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 3.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 3300pF @ 25V Power Dissipation (Max): 3.8W (Ta), 106W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN	1000 Order	1+: $0
APT53N60BC6-ND	APT53N60BC6	Microsemi Corporation	View more Series: CoolMOS Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 53A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 70 mOhm @ 25.8A, 10V Vgs(th) (Max) @ Id: 3.5V @ 1.72mA Gate Charge (Qg) (Max) @ Vgs: 154nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 4020pF @ 25V Power Dissipation (Max): 417W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 [B] Package / Case: TO-247-3	47 Order	--
ZVP3306A-ND	ZVP3306A	Diodes Incorporated	View more Packaging: Bulk Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 160mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 14 Ohm @ 200mA, 10V Vgs(th) (Max) @ Id: 3.5V @ 1mA Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 18V Power Dissipation (Max): 625mW (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA)	1000 Order	--
VP2206N2-ND	VP2206N2	Microchip Technology	View more Packaging: Bulk Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 750mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Rds On (Max) @ Id, Vgs: 900 mOhm @ 3.5A, 10V Vgs(th) (Max) @ Id: 3.5V @ 10mA Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 25V Power Dissipation (Max): 360mW (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-39 Package / Case: TO-205AD, TO-39-3 Metal Can	532 Order	1+: $8.505 25+: $7.7972 100+: $7.5766
NTMFS5C430NT3G- ND	NTMFS5C430NT3G	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25C: 35A (Ta), 185A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.7 mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 3.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 3300pF @ 25V Power Dissipation (Max): 3.8W (Ta), 106W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	1000 Order	5000+: $0.6593
IPW65R280C6FKSA 1-ND	IPW65R280C6FKSA 1	Infineon Technologies	View more Series: CoolMOS Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25C: 13.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 280 mOhm @ 4.4A, 10V Vgs(th) (Max) @ Id: 3.5V @ 440A Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 100V Power Dissipation (Max): 104W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3 Package / Case: TO-247-3	1000 Order	1+: $0
IPS65R600E6AKMA 1-ND	IPS65R600E6AKMA 1	Infineon Technologies	View more Series: CoolMOS E6 Packaging: Tube Part Status: Not For New Designs FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25C: 7.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 600 mOhm @ 2.1A, 10V Vgs(th) (Max) @ Id: 3.5V @ 210A Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 100V Power Dissipation (Max): 63W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO251-3 Package / Case: TO-251-3 Stub Leads, IPak	1000 Order	1500+: $0.4824
IPP90R500C3XKSA 1-ND	IPP90R500C3XKSA 1	Infineon Technologies	View more Series: CoolMOS Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 500 mOhm @ 6.6A, 10V Vgs(th) (Max) @ Id: 3.5V @ 740A Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 100V Power Dissipation (Max): 156W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	1000 Order	1+: $0
SISS40DN-T1-GE3 TR-ND	SISS40DN-T1-GE3	Vishay Siliconix	View more Series: ThunderFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 36.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 21 mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 3.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 845pF @ 50V Power Dissipation (Max): 3.7W (Ta), 52W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK 1212-8S (3.3x3.3) Package / Case: 8-PowerVDFN	1000 Order	--
IPA60R520CPXKSA 1-ND	IPA60R520CPXKSA 1	Infineon Technologies	View more Series: CoolMOS Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 6.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 520 mOhm @ 3.8A, 10V Vgs(th) (Max) @ Id: 3.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 100V Power Dissipation (Max): 30W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO-220-FP Package / Case: TO-220-3 Full Pack	1000 Order	1+: $0

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