Low noise operational amplifier - Allicdata Electronics

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Allicdata Part#	Mft.Part#	Company	Spec.	QTY.	Pricing(USD)
NVTFS5124PLTWGO STR-ND	NVTFS5124PLTWG	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 2.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 260 mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 25V Power Dissipation (Max): 3W (Ta), 18W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-WDFN (3.3x3.3) Package / Case: 8-PowerWDFN	1000 Order	5000+: $0.1488
1727-5485-2-ND	BSP126,135	Nexperia USA Inc.	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25C: 375mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 5 Ohm @ 300mA, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 25V Power Dissipation (Max): 1.5W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	1000 Order	4000+: $0.1628
ZXMP3A17E6TR-ND	ZXMP3A17E6TA	Diodes Incorporated	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 3.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 70 mOhm @ 3.2A, 10V Vgs(th) (Max) @ Id: 1V @ 250A Gate Charge (Qg) (Max) @ Vgs: 15.8nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 15V Power Dissipation (Max): 1.1W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-6 Package / Case: SOT-23-6	1000 Order	--
FDS6670ASFSTR-N D	FDS6670AS	ON Semiconductor	View more Series: PowerTrench, SyncFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 13.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 9 mOhm @ 13.5A, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1540pF @ 15V Power Dissipation (Max): 2.5W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	1000 Order	--
2SK303100LTR-ND	2SK303100L	Panasonic Electronic Components	View more Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Rds On (Max) @ Id, Vgs: 135 mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 10V Power Dissipation (Max): 1W (Ta), 20W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: U-G1 Package / Case: U-G1	3000 Order	3000+: $0.6894
1727-7203-2-ND	PMK30EP,518	Nexperia USA Inc.	View more Series: TrenchMOS Packaging: Tape & Reel (TR) Part Status: Last Time Buy FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 14.9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 19 mOhm @ 9.2A, 10V Vgs(th) (Max) @ Id: 3V @ 250A Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2240pF @ 25V Power Dissipation (Max): 6.9W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	1000 Order	10000+: $0.2505
SQJA94EP-T1_GE3 TR-ND	SQJA94EP-T1_GE3	Vishay Siliconix	View more Series: Automotive, AEC-Q101, TrenchFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25C: 46A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 13.5 mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 3.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 25V Power Dissipation (Max): 55W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK SO-8 Package / Case: PowerPAK SO-8	1000 Order	3000+: $0.2921
497-4103-2-ND	STD4NK50ZT4	STMicroelectronics	View more Series: SuperMESH Packaging: Tape & Reel (TR) Part Status: Not For New Designs FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25C: 3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 2.7 Ohm @ 1.5A, 10V Vgs(th) (Max) @ Id: 4.5V @ 50A Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 25V Power Dissipation (Max): 45W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	--
FDMC6688PTR-ND	FDMC6688P	ON Semiconductor	View more Series: PowerTrench Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 14A (Ta), 56A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 14A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250A Gate Charge (Qg) (Max) @ Vgs: 61nC @ 4.5V Vgs (Max): 8V Input Capacitance (Ciss) (Max) @ Vds: 7435pF @ 10V Power Dissipation (Max): 2.3W (Ta), 30W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PQFN (3.3x3.3), Power33 Package / Case: 8-PowerWDFN	1000 Order	--
DMNH6012SPS-13D ITR-ND	DMNH6012SPS-13	Diodes Incorporated	View more Series: Automotive, AEC-Q101 Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 11 mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 35.2nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1926pF @ 30V Power Dissipation (Max): 1.6W (Ta) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerDI5060-8 Package / Case: 8-PowerTDFN	1000 Order	2500+: $0.3804
FQPF6N80TFS-ND	FQPF6N80T	ON Semiconductor	View more Series: QFET Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25C: 3.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.95 Ohm @ 1.65A, 10V Vgs(th) (Max) @ Id: 5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 25V Power Dissipation (Max): 51W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	1406 Order	1+: $1.9971 10+: $1.8056 100+: $1.451 500+: $1.1285 1000+: $0.9351
FDBL86361-F085T R-ND	FDBL86361-F085	ON Semiconductor	View more Series: Automotive, AEC-Q101, PowerTrench Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25C: 300A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.4 mOhm @ 80A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 188nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 12800pF @ 25V Power Dissipation (Max): 429W (Tj) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PSOF Package / Case: 8-PowerSFN	1000 Order	2000+: $1.4511
497-12972-2-ND	STB36NM60N	STMicroelectronics	View more Series: Automotive, AEC-Q101, MDmesh II Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 29A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 105 mOhm @ 14.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 83.6nC @ 10V Vgs (Max): 25V Input Capacitance (Ciss) (Max) @ Vds: 2722pF @ 100V Power Dissipation (Max): 210W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	1000+: $4.8565
IRF9335TRPBFTR- ND	IRF9335TRPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 5.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 59 mOhm @ 5.4A, 10V Vgs(th) (Max) @ Id: 2.4V @ 10A Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 386pF @ 25V Power Dissipation (Max): 2.5W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	1000 Order	--
IRF1405ZPBF-ND	IRF1405ZPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 4.9 mOhm @ 75A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 4780pF @ 25V Power Dissipation (Max): 230W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	1000 Order	--
IPA80R900P7XKSA 1-ND	IPA80R900P7XKSA 1	Infineon Technologies	View more Series: CoolMOS P7 Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 900 mOhm @ 2.2A, 10V Vgs(th) (Max) @ Id: 3.5V @ 110A Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 500V Power Dissipation (Max): 26W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220 Full Pack Package / Case: TO-220-3 Full Pack	153 Order	1+: $1.1214 10+: $0.9916 100+: $0.7838 500+: $0.6079 1000+: $0.4799
TSM60NB380CFC0G -ND	TSM60NB380CF C0 G	Taiwan Semiconductor Corporation	View more Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 380 mOhm @ 2.7A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 810pF @ 100V Power Dissipation (Max): 62.5W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: ITO-220S Package / Case: TO-220-3 Full Pack	990 Order	1+: $1.2348 10+: $1.1157 100+: $0.8966 500+: $0.6973 1000+: $0.5778
IPP80R600P7XKSA 1-ND	IPP80R600P7XKSA 1	Infineon Technologies	View more Series: CoolMOS P7 Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 600 mOhm @ 3.4A, 10V Vgs(th) (Max) @ Id: 3.5V @ 170A Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 500V Power Dissipation (Max): 60W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3 Package / Case: TO-220-3	1035 Order	1+: $1.2348 10+: $1.117 100+: $0.8976 500+: $0.6981 1000+: $0.5784
IPP052N08N5AKSA 1-ND	IPP052N08N5AKSA 1	Infineon Technologies	View more Series: OptiMOS Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 5.2 mOhm @ 80A, 10V Vgs(th) (Max) @ Id: 3.8V @ 66A Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 3770pF @ 40V Power Dissipation (Max): 125W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO-220-3 Package / Case: TO-220-3	355 Order	1+: $1.6884 10+: $1.5252 100+: $1.2255 500+: $0.9532 1000+: $0.7898
SIHA14N60E-E3-N D	SIHA14N60E-E3	Vishay Siliconix	View more Series: E Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 309 mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 1205pF @ 100V Power Dissipation (Max): 147W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Full Pack Package / Case: TO-220-3 Full Pack	957 Order	1+: $1.7199 10+: $1.5542 100+: $1.2487 500+: $0.9712 1000+: $0.8047
IRF135B203-ND	IRF135B203	Infineon Technologies	View more Series: StrongIRFET Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 135V Current - Continuous Drain (Id) @ 25C: 129A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 8.4 mOhm @ 77A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 9700pF @ 50V Power Dissipation (Max): 441W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO-220-3 Package / Case: TO-220-3	444 Order	--
1727-6500-ND	PSMN4R3-100ES,1 27	Nexperia USA Inc.	View more Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 4.3 mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 9900pF @ 50V Power Dissipation (Max): 338W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK Package / Case: TO-262-3 Long Leads, IPak, TO-262AA	198 Order	1+: $2.0412 50+: $1.6482 100+: $1.4834 500+: $1.1538 1000+: $0.956
IRLL3303PBF-ND	IRLL3303PBF	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Discontinued at Digi-Key FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 4.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 31 mOhm @ 4.6A, 10V Vgs(th) (Max) @ Id: 1V @ 250A Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V Vgs (Max): 16V Input Capacitance (Ciss) (Max) @ Vds: 840pF @ 25V Power Dissipation (Max): 1W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	493 Order	--
FQB7P20TMTR-ND	FQB7P20TM	ON Semiconductor	View more Series: QFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25C: 7.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 690 mOhm @ 3.65A, 10V Vgs(th) (Max) @ Id: 5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 770pF @ 25V Power Dissipation (Max): 3.13W (Ta), 90W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK (TO-263AB) Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	800 Order	--
SIR844DP-T1-GE3 TR-ND	SIR844DP-T1-GE3	Vishay Siliconix	View more Series: TrenchFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 2.8 mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.6V @ 250A Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 3215pF @ 10V Power Dissipation (Max): 5W (Ta), 50W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK SO-8 Package / Case: PowerPAK SO-8	1000 Order	3000+: $0.511
FDS86240TR-ND	FDS86240	ON Semiconductor	View more Series: PowerTrench Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25C: 7.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 19.8 mOhm @ 7.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2570pF @ 75V Power Dissipation (Max): 2.5W (Ta), 5W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	1000 Order	--
HUF76639S3ST-F0 85TR-ND	HUF76639S3ST-F0 85	ON Semiconductor	View more Series: UltraFET Packaging: Tape & Reel (TR) Part Status: Last Time Buy FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 51A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 26 mOhm @ 51A, 10V Vgs(th) (Max) @ Id: 3V @ 250A Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V Vgs (Max): 16V Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 25V Power Dissipation (Max): 180W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK (TO-263AB) Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	800+: $0.9485
IXFN32N100Q3-ND	IXFN32N100Q3	IXYS	View more Series: HiPerFET Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25C: 28A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 320 mOhm @ 16A, 10V Vgs(th) (Max) @ Id: 6.5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 195nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 9940pF @ 25V Power Dissipation (Max): 780W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227B Package / Case: SOT-227-4, miniBLOC	10 Order	1+: $32.9742 10+: $30.8335 100+: $26.7341
IRFS7734TRLPBFT R-ND	IRFS7734TRLPBF	Infineon Technologies	View more Series: HEXFET, StrongIRFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25C: 183A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 3.7V @ 250A Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 10150pF @ 25V Power Dissipation (Max): 290W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK (TO-263AB) Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	800+: $0.9945
DMP3026SFDF-13- ND	DMP3026SFDF-13	Diodes Incorporated	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 10.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Rds On (Max) @ Id, Vgs: 19 mOhm @ 4.5A, 10V Vgs(th) (Max) @ Id: 3V @ 250A Gate Charge (Qg) (Max) @ Vgs: 19.6nC @ 10V Vgs (Max): 25V Input Capacitance (Ciss) (Max) @ Vds: 1204pF @ 15V Power Dissipation (Max): 2W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: U-DFN2020-6 (Type F) Package / Case: 6-UDFN Exposed Pad	1000 Order	10000+: $0.1008
AUIRFR3806TRL-N D	AUIRFR3806TRL	Infineon Technologies	View more Series: HEXFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 43A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 15.8 mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 4V @ 50A Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 50V Power Dissipation (Max): 71W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-PAK (TO-252AA) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	3000+: $0.4865
SPU03N60S5BKMA1 -ND	SPU03N60S5BKMA1	Infineon Technologies	View more Series: CoolMOS Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 3.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 2A, 10V Vgs(th) (Max) @ Id: 5.5V @ 135A Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 25V Power Dissipation (Max): 38W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO251-3 Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	1000 Order	--
AON6782-ND	AON6782	Alpha & Omega Semiconductor Inc.	View more Series: SRFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 24A (Ta), 85A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 2.4 mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2V @ 250A Gate Charge (Qg) (Max) @ Vgs: 51nC @ 10V Vgs (Max): 12V Input Capacitance (Ciss) (Max) @ Vds: 6780pF @ 15V FET Feature: Schottky Diode (Body) Power Dissipation (Max): 2.5W (Ta), 83W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-DFN (5x6) Package / Case: 8-PowerSMD, Flat Leads	1000 Order	--
IPB80N06S405ATM A2-ND	IPB80N06S405ATM A2	Infineon Technologies	View more Series: Automotive, AEC-Q101, OptiMOS Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 5.7 mOhm @ 80A, 10V Vgs(th) (Max) @ Id: 4V @ 60A Gate Charge (Qg) (Max) @ Vgs: 81nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 6500pF @ 25V Power Dissipation (Max): 107W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	1000+: $0.5104
NVMFS4C01NT3G-N D	NVMFS4C01NT3G	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 49A (Ta), 319A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 0.9 mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250A Gate Charge (Qg) (Max) @ Vgs: 139nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 10144pF @ 15V Power Dissipation (Max): 3.84W (Ta), 161W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN	1000 Order	5000+: $0.5378
AUIRLZ24NS-ND	AUIRLZ24NS	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Rds On (Max) @ Id, Vgs: 60 mOhm @ 11A, 10V Vgs(th) (Max) @ Id: 2V @ 250A Gate Charge (Qg) (Max) @ Vgs: 15nC @ 5V Vgs (Max): 16V Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 25V Power Dissipation (Max): 3.8W (Ta), 45W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	1000+: $0.5383
RSS130N03FU6TB- ND	RSS130N03FU6TB	ROHM Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Not For New Designs FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 13A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Rds On (Max) @ Id, Vgs: 8.1 mOhm @ 13A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 5V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 10V Power Dissipation (Max): 2W (Ta) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	1000 Order	--
FQPF5P20RDTU-ND	FQPF5P20RDTU	ON Semiconductor	View more Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25C: 2.15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 1.7A, 10V Vgs(th) (Max) @ Id: 5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 430pF @ 25V Power Dissipation (Max): 38W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	1000 Order	--
TPS1101DR-ND	TPS1101DR	Texas Instruments	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 15V Current - Continuous Drain (Id) @ 25C: 2.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.7V, 10V Rds On (Max) @ Id, Vgs: 90 mOhm @ 2.5A, 10V Vgs(th) (Max) @ Id: 1.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 11.25nC @ 10V Vgs (Max): +2V, -15V Power Dissipation (Max): 791mW (Ta) Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)	1000 Order	--
IPA60R520E6XKSA 1-ND	IPA60R520E6XKSA 1	Infineon Technologies	View more Series: CoolMOS Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 8.1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 520 mOhm @ 2.8A, 10V Vgs(th) (Max) @ Id: 3.5V @ 230A Gate Charge (Qg) (Max) @ Vgs: 23.4nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 512pF @ 100V Power Dissipation (Max): 29W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO-220-FP Package / Case: TO-220-3 Full Pack	1000 Order	1+: $0

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