Transistor npn circuit - Allicdata Electronics

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Allicdata Part#	Mft.Part#	Company	Spec.	QTY.	Pricing(USD)
SIPC69N65C3X1SA 1-ND	SIPC69N65C3X1SA 1	Infineon Technologies	View more Series: * Part Status: Active	1000 Order	1719+: $4.5799
SIPC18N60CFDX1S A1-ND	SIPC18N60CFDX1S A1	Infineon Technologies	View more Series: * Part Status: Active	1000 Order	6980+: $1.124
SIPC14N60C3X1SA 1-ND	SIPC14N60C3X1SA 1	Infineon Technologies	View more Series: * Part Status: Active	1000 Order	9000+: $0.8337
SISC262SN06LX1S A1-ND	SISC262SN06LX1S A1	Infineon Technologies	View more Series: * Part Status: Active	1000 Order	53360+: $0.1682
SISC29N20DX1SA1 -ND	SISC29N20DX1SA1	Infineon Technologies	View more Series: * Part Status: Active	1000 Order	23760+: $0.3368
GA50JT12-263-ND	GA50JT12-263	GeneSiC Semiconductor	View more Series: * Part Status: Obsolete	1000 Order	1+: $0
SISC097N24DX1SA 1-ND	SISC097N24DX1SA 1	Infineon Technologies	View more Series: * Part Status: Active	1000 Order	999999+: $0.2806
SISC185N06LX1SA 1-ND	SISC185N06LX1SA 1	Infineon Technologies	View more Series: * Part Status: Active	1000 Order	75960+: $0.1007
FCPF11N65_G-ND	FCPF11N65_G	ON Semiconductor	View more Part Status: Obsolete	1000 Order	1+: $0
FDMS0306S-ND	FDMS0306S	ON Semiconductor	View more Part Status: Obsolete	1000 Order	--
FDMC6675BZ-T-ND	FDMC6675BZ-T	ON Semiconductor	View more Part Status: Last Time Buy	1000 Order	1+: $0
TIP42CTU-T-ND	TIP42CTU-T	ON Semiconductor	View more Part Status: Last Time Buy	1000 Order	1+: $0
CPH6350-TL-EX-N D	CPH6350-TL-EX	ON Semiconductor	View more Part Status: Last Time Buy	1000 Order	1+: $0
VEC2415-TL-EX-N D	VEC2415-TL-EX	ON Semiconductor	View more Part Status: Last Time Buy	1000 Order	1+: $0
SCH1337-TL-HX-N D	SCH1337-TL-HX	ON Semiconductor	View more Part Status: Last Time Buy	1000 Order	1+: $0
TK1K9A60FS4X-ND	TK1K9A60F,S4X	Toshiba Semiconductor and Storage	View more Series: U-MOSIX Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 3.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.9 Ohm @ 1.9A, 10V Vgs(th) (Max) @ Id: 4V @ 400A Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 300V Power Dissipation (Max): 30W (Tc) Operating Temperature: 150C Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack	301 Order	1+: $0.6615 50+: $0.5274 100+: $0.4615 500+: $0.3579 1000+: $0.2826
TK650A60FS4X-ND	TK650A60F,S4X	Toshiba Semiconductor and Storage	View more Series: U-MOSIX Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 11A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 650 mOhm @ 5.5A, 10V Vgs(th) (Max) @ Id: 4V @ 1.16mA Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 1320pF @ 300V Power Dissipation (Max): 45W (Tc) Operating Temperature: 150C Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack	395 Order	1+: $0.9828 50+: $0.7871 100+: $0.6887 500+: $0.5341 1000+: $0.4217
TK1K2A60FS4X-ND	TK1K2A60F,S4X	Toshiba Semiconductor and Storage	View more Series: U-MOSIX Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 3A, 10V Vgs(th) (Max) @ Id: 4V @ 630A Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 300V Power Dissipation (Max): 35W (Tc) Operating Temperature: 150C Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack	950 Order	1+: $0.756 50+: $0.6066 100+: $0.5307 500+: $0.4116 1000+: $0.3249
TK750A60FS4X-ND	TK750A60F,S4X	Toshiba Semiconductor and Storage	View more Series: U-MOSIX Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 10A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 750 mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 1130pF @ 300V Power Dissipation (Max): 40W (Tc) Operating Temperature: 150C Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack	395 Order	1+: $0.9261 50+: $0.7384 100+: $0.6461 500+: $0.5011 1000+: $0.3956
1242-1150-ND	2N7639-GA	GeneSiC Semiconductor	View more Packaging: Bulk Part Status: Obsolete Technology: SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25C: 15A (Tc) (155C) Rds On (Max) @ Id, Vgs: 105 mOhm @ 15A Input Capacitance (Ciss) (Max) @ Vds: 1534pF @ 35V Power Dissipation (Max): 172W (Tc) Operating Temperature: -55C ~ 225C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-257 Package / Case: TO-257-3	1000 Order	1+: $0
1242-1252-ND	GA05JT03-46	GeneSiC Semiconductor	View more Packaging: Bulk Part Status: Active Technology: SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss): 300V Current - Continuous Drain (Id) @ 25C: 9A (Tc) Rds On (Max) @ Id, Vgs: 240 mOhm @ 5A Power Dissipation (Max): 20W (Tc) Operating Temperature: -55C ~ 225C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-46 Package / Case: TO-46-3	25 Order	1+: $48.7179 10+: $45.8527 25+: $42.9871
1242-1251-ND	GA05JT01-46	GeneSiC Semiconductor	View more Packaging: Bulk Part Status: Active Technology: SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 9A (Tc) Rds On (Max) @ Id, Vgs: 240 mOhm @ 5A Power Dissipation (Max): 20W (Tc) Operating Temperature: -55C ~ 225C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-46 Package / Case: TO-46-3	79 Order	1+: $40.7421 10+: $38.3449 25+: $35.9481
1242-1147-ND	2N7636-GA	GeneSiC Semiconductor	View more Packaging: Tube Part Status: Obsolete Technology: SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25C: 4A (Tc) (165C) Rds On (Max) @ Id, Vgs: 415 mOhm @ 4A Input Capacitance (Ciss) (Max) @ Vds: 324pF @ 35V Power Dissipation (Max): 125W (Tc) Operating Temperature: -55C ~ 225C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-276 Package / Case: TO-276AA	1000 Order	1+: $0
1242-1317-ND	GA100JT12-227	GeneSiC Semiconductor	View more Packaging: Tube Part Status: Active Technology: SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25C: 160A (Tc) Rds On (Max) @ Id, Vgs: 10 mOhm @ 100A Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 800V Power Dissipation (Max): 535W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227 Package / Case: SOT-227-4, miniBLOC	1000 Order	1+: $127.928 10+: $121.755
1242-1318-ND	GA10SICP12-263	GeneSiC Semiconductor	View more Packaging: Tube Part Status: Active Technology: SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25C: 25A (Tc) Rds On (Max) @ Id, Vgs: 100 mOhm @ 10A Input Capacitance (Ciss) (Max) @ Vds: 1403pF @ 800V Power Dissipation (Max): 170W (Tc) Operating Temperature: 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (7-Lead) Package / Case: TO-263-8, DPak (7 Leads + Tab), TO-263CA	1000 Order	500+: $18.2036
1242-1184-ND	GA05JT12-263	GeneSiC Semiconductor	View more Packaging: Tube Part Status: Active Technology: SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25C: 15A (Tc) Power Dissipation (Max): 106W (Tc) Operating Temperature: 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (7-Lead) Package / Case: TO-263-8, DPak (7 Leads + Tab), TO-263CA	1134 Order	1+: $8.316 10+: $7.4825 50+: $6.8172 100+: $6.1521 250+: $5.6533 500+: $5.1545
1242-1187-ND	GA10JT12-247	GeneSiC Semiconductor	View more Packaging: Tube Part Status: Obsolete Technology: SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25C: 10A (Tc) Rds On (Max) @ Id, Vgs: 140 mOhm @ 10A Power Dissipation (Max): 170W (Tc) Operating Temperature: 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AB Package / Case: TO-247-3	1000 Order	1+: $0
1242-1188-ND	GA20JT12-247	GeneSiC Semiconductor	View more Packaging: Tube Part Status: Obsolete Technology: SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25C: 20A (Tc) Rds On (Max) @ Id, Vgs: 70 mOhm @ 20A Power Dissipation (Max): 282W (Tc) Operating Temperature: 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AB Package / Case: TO-247-3	1000 Order	1+: $0
1242-1148-ND	2N7637-GA	GeneSiC Semiconductor	View more Packaging: Tube Part Status: Obsolete Technology: SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25C: 7A (Tc) (165C) Rds On (Max) @ Id, Vgs: 170 mOhm @ 7A Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 35V Power Dissipation (Max): 80W (Tc) Operating Temperature: -55C ~ 225C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-257 Package / Case: TO-257-3	1000 Order	1+: $0
1242-1191-ND	GA50JT12-247	GeneSiC Semiconductor	View more Packaging: Tube Part Status: Active Technology: SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25C: 100A (Tc) Rds On (Max) @ Id, Vgs: 25 mOhm @ 50A Input Capacitance (Ciss) (Max) @ Vds: 7209pF @ 800V Power Dissipation (Max): 583W (Tc) Operating Temperature: 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AB Package / Case: TO-247-3	38 Order	1+: $75.5307 10+: $70.8099 30+: $67.5058
1242-1314-ND	GA100JT17-227	GeneSiC Semiconductor	View more Packaging: Tube Part Status: Obsolete Technology: SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss): 1700V Current - Continuous Drain (Id) @ 25C: 160A (Tc) Rds On (Max) @ Id, Vgs: 10 mOhm @ 100A Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 800V Power Dissipation (Max): 535W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227 Package / Case: SOT-227-4, miniBLOC	1000 Order	1+: $0
1242-1253-ND	GA50JT06-258	GeneSiC Semiconductor	View more Packaging: Bulk Part Status: Active Technology: SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 100A (Tc) Rds On (Max) @ Id, Vgs: 25 mOhm @ 50A Power Dissipation (Max): 769W (Tc) Operating Temperature: -55C ~ 225C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-258 Package / Case: TO-258-3, TO-258AA	1000 Order	10+: $443.838
1242-1186-ND	GA10JT12-263	GeneSiC Semiconductor	View more Packaging: Tube Part Status: Active Technology: SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25C: 25A (Tc) Rds On (Max) @ Id, Vgs: 120 mOhm @ 10A Input Capacitance (Ciss) (Max) @ Vds: 1403pF @ 800V Power Dissipation (Max): 170W (Tc) Operating Temperature: 175C (TJ) Mounting Type: Surface Mount	770 Order	1+: $14.5971 10+: $13.2722 50+: $12.2768 100+: $11.2814 250+: $10.286
1242-1185-ND	GA05JT12-247	GeneSiC Semiconductor	View more Packaging: Tube Part Status: Obsolete Technology: SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25C: 5A (Tc) Rds On (Max) @ Id, Vgs: 280 mOhm @ 5A Power Dissipation (Max): 106W (Tc) Operating Temperature: 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AB Package / Case: TO-247-3	1000 Order	1+: $0
1242-1136-ND	GA16JT17-247	GeneSiC Semiconductor	View more Packaging: Tube Part Status: Obsolete Technology: SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss): 1700V Current - Continuous Drain (Id) @ 25C: 16A (Tc) (90C) Rds On (Max) @ Id, Vgs: 110 mOhm @ 16A Power Dissipation (Max): 282W (Tc) Operating Temperature: 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AB Package / Case: TO-247-3	1000 Order	1+: $0
1242-1164-ND	GA03JT12-247	GeneSiC Semiconductor	View more Packaging: Tube Part Status: Obsolete Technology: SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25C: 3A (Tc) (95C) Rds On (Max) @ Id, Vgs: 460 mOhm @ 3A Power Dissipation (Max): 15W (Tc) Operating Temperature: 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AB Package / Case: TO-247-3	1000 Order	1+: $0
1242-1151-ND	2N7640-GA	GeneSiC Semiconductor	View more Packaging: Bulk Part Status: Obsolete Technology: SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25C: 16A (Tc) (155C) Rds On (Max) @ Id, Vgs: 105 mOhm @ 16A Input Capacitance (Ciss) (Max) @ Vds: 1534pF @ 35V Power Dissipation (Max): 330W (Tc) Operating Temperature: -55C ~ 225C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-276 Package / Case: TO-276AA	1000 Order	1+: $0
1242-1189-ND	GA20JT12-263	GeneSiC Semiconductor	View more Packaging: Tube Part Status: Active Technology: SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25C: 45A (Tc) Rds On (Max) @ Id, Vgs: 60 mOhm @ 20A Input Capacitance (Ciss) (Max) @ Vds: 3091pF @ 800V Power Dissipation (Max): 282W (Tc) Operating Temperature: 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (7-Lead) Package / Case: TO-263-8, DPak (7 Leads + Tab), TO-263CA	254 Order	1+: $26.5419 10+: $24.5536 50+: $22.5628 100+: $20.9702
1242-1165-ND	GA06JT12-247	GeneSiC Semiconductor	View more Packaging: Tube Part Status: Obsolete Technology: SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25C: 6A (Tc) (90C) Rds On (Max) @ Id, Vgs: 220 mOhm @ 6A Operating Temperature: 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AB Package / Case: TO-247-3	1000 Order	1+: $0
1242-1146-ND	2N7635-GA	GeneSiC Semiconductor	View more Packaging: Bulk Part Status: Obsolete Technology: SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25C: 4A (Tc) (165C) Rds On (Max) @ Id, Vgs: 415 mOhm @ 4A Input Capacitance (Ciss) (Max) @ Vds: 324pF @ 35V Power Dissipation (Max): 47W (Tc) Operating Temperature: -55C ~ 225C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-257 Package / Case: TO-257-3	1000 Order	1+: $0

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