Allicdata Part #: | 1014-12-ND |
Manufacturer Part#: |
1014-12 |
Price: | $ 124.81 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | TRANS RF BIPO 39W 5A 55LT1 |
More Detail: | RF Transistor NPN 50V 5A 1GHz ~ 1.4GHz 39W Chassis... |
DataSheet: | 1014-12 Datasheet/PDF |
Quantity: | 1000 |
50 +: | $ 113.46400 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
Transistor Type: | NPN |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Frequency - Transition: | 1GHz ~ 1.4GHz |
Noise Figure (dB Typ @ f): | -- |
Gain: | 6.8dB |
Power - Max: | 39W |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 10 @ 200mA, 5V |
Current - Collector (Ic) (Max): | 5A |
Operating Temperature: | 200°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | 55LT |
Supplier Device Package: | 55LT |
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Introduction to 1014-12 Application Field and Working Principle
The 1014-12 is a type of bipolar junction transistor (BJT) specifically designed for radio frequency (RF) communications. This general-purpose RF BJT, commonly known as the ‘small-signal transistor’, is designed for high gain, rather than power applications. It is widely used for RF circuit design in the cellular, amateur radio, and automotive communications markets, on account of its low cost, high stability and good linearity. This article will provide an overview of its application fields, working principle and general characteristics.
Application
BJTs such as the 1014-12 transistor can be found in a variety of radio frequency communication applications. Examples include: radio receivers and transmitters, transceivers, cellular base stations, RF amplifiers, audio applications, and in camera circuitry. The 1014-12 features good gain and linearity at both low and medium frequencies, making it well-suited for use in oscillators and amplifiers in many of these applications.
Working Principle
BJTs, such as the 1014-12, work by using two doped regions, called the base and the collector region. In a BJT, current is controlled by the voltage applied to the base, which has the effect of controlling the number of electrons and holes in the collector region. This, in turn, controls the current flowing between the base and the collector. The BJT also has an emitter, which is connected to the base and collector via two p-n junctions. The emitter is the most heavily doped region, and its purpose is to inject electrons into the base. This helps to prevent the BJT from turning off when there is no base current.
General Characteristics
The 1014-12 features very low noise and good linearity at moderate power levels. It also has a low beta cutoff frequency of only a few MHz, making it well suited for use in low frequency applications. Additionally, the 1014-12 has a low input capacitance, which helps reduce stability problems in RF circuits. The breakdown voltage of this transistor is also relatively low, which makes it well-suited for use in low voltage applications.
Conclusion
The 1014-12 is an excellent transistor for use in a variety of radio frequency applications. It features good gain, low noise, and good linearity at low and moderate frequencies. Additionally, it has a low breakdown voltage and low input capacitance, making it well-suited for use in low voltage circuits. All in all, the 1014-12 is an excellent choice for most radio frequency applications.
The specific data is subject to PDF, and the above content is for reference
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