FJN4314RBU

Transistors - Bipolar (BJT) - Single, Pre-Biased

The FJN4314RBU is a N-Channel JFET (Junction Field-Effect Transistor) designed for pre-biased DC circuits. This device has a maximum current rating of 0.025A, a voltage rating of ±3V and a power handling rating of 0.7W. This device may be of use in a wide range of applications and applications fields depending upon the needs of the circuit.

Application Fields

The FJN4314RBU is useful for such circuits that require a low speed switch with low noise level. It may be used in solar panel interface circuits, signal processing circuits, switching circuits for digital signals, DC power controllers, and power conditioning packs. Most of these applications take advantage of the fact that this device is pre-biased. This means that the voltage of the condenser which is connected to the source node of the device has to be greater than the gate threshold voltage in order for the FJN4314RBU to conduct current.

Working Principle

The FJN4314RBU is a two terminal device, with a source and a gate. It works on the principle of field-effect. In this type of transistors, current flows between two terminals, the source and the drain respectively, without the presence of bias voltage on the gate node. These transistors are usually utilized in junction-mode applications. This device has a parasitic capacitance between the gate and source that must be compensated for in order for the device to function properly. The capacitance between the source and gate is generated by electric fields from the source to the drain.

The FJN4314RBU can be used effectively in applications where a low current signal need to be switched, or where a low noise level is required. The FJN4314RBU can also be found in power conditioning packs as it can help maintain a low noise level. This device is also ideal for solar panel interface circuits, as a low amount of current is needed in these applications.