RN2607(TE85L,F) Datasheet(PDF) - Toshiba Semiconductor and Storage
Part No. | RN2607(TE85L,F) |
Description | TRANS 2PNP PREBIAS 0.3W SM6 Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 300mW Surface Mount SM6 |
Manufacturer Part | Toshiba Semiconductor and Storage |
Part Number | Components Description | Manufacturer |
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#252MXPR-2535A | FILTER HELICAL 405MHZ TYPE 7HW | |
#458PT-1566=P3 | AUDIO TRANSFORMERS / SIGNAL TRAN | |
#A921CY-680M=P3 | FIXED IND 68UH 730MA 324 MOHM 68µH Shielded Inductor 730mA 324 mOhm Max Nonstandard |
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#B952AS-H-100M=P3 | FIXED IND 10µH Shielded Wirewound Inductor 2.7A 44 mOhm Max Nonstandard |
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#B952AS-H-101M=P3 | FIXED IND 100µH Shielded Wirewound Inductor 900mA 380 mOhm Max Nonstandard |
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#B952AS-H-121M=P3 | FIXED IND 120µH Shielded Wirewound Inductor 800mA 460 mOhm Max Nonstandard |
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#B952AS-H-150M=P3 | FIXED IND 15µH Shielded Wirewound Inductor 2.3A 62 mOhm Max Nonstandard |
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#B952AS-H-180M=P3 | FIXED IND 18µH Shielded Wirewound Inductor 2A 79 mOhm Max Nonstandard |
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#B952AS-H-1R1N=P3 | FIXED IND 1.1µH Shielded Wirewound Inductor 6A 11 mOhm Max Nonstandard |