RN2607(TE85L,F) Discrete Semiconductor Products |
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Allicdata Part #: | RN2607(TE85LF)TR-ND |
Manufacturer Part#: |
RN2607(TE85L,F) |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | TRANS 2PNP PREBIAS 0.3W SM6 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Bi... |
DataSheet: | RN2607(TE85L,F) Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | 2 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 10 kOhms |
Resistor - Emitter Base (R2): | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
Frequency - Transition: | 200MHz |
Power - Max: | 300mW |
Mounting Type: | Surface Mount |
Package / Case: | SC-74, SOT-457 |
Supplier Device Package: | SM6 |
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The TE85LF family of transistors, also known as RN2607 (which is the product number of this range of transistors), are used in a variety of applications such as signal amplification, switching and linear signal processing. This family of transistors can be supllied with a pre-biased configuration in order to reduce the number of parts needed for a design, resulting in lower cost and simplified designs.
This particular range of transistors are housed in a SOT-23 package with three pins; Base, Emitter and Collector. Usually two of the pins will be connected to the pre-biased configuration in order to reduce the number of external components required. The TE85LF range of transistors provide good stability at high operating temperatures, making them suitable for use in a variety of applications.
These transistors offers excellent parameters and high performance in a variety of applications, including signal amplification and switching, power supply design, switching power converters and more. The TE85LF transistors are also highly reliable and require low power to operate. The low power required to operate these transistors makes them attractive for a variety of applications.
The working principle of these transistors is based on their ability to control current flow between the base and the collector. A small base current is applied to the base electrode and the resulting current flow between the collector and the emitter can be controlled. By varying the base current it is possible to regulate the amount of current flowing through the transistor. This enables them to be used for linear signal processing, amplification and switching.
In addition to the TE85LF range of transistors, a variety of other arrays and pre-biased transistors are available. These can range from simple one-transistor arrays to multiple-transistor arrays, with more specialized designs such as BJTs, MOSFETs and FETs. Depending on the application, a variety of transistors can be used in these arrays and pre-biased configurations.
The TE85LF range of transistors is suitable for a variety of applications and offers excellent performance in signal amplification, switching and linear signal processing. These transistors can be supplied with a pre-biased configuration in order to reduce the number of external components required, resulting in lower costs and simplified designs.
The specific data is subject to PDF, and the above content is for reference
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