RN4987FE,LF(CB Datasheet(PDF) - Toshiba Semiconductor and Storage
| Part No. | RN4987FE,LF(CB |
| Description | TRANS NPN/PNP PREBIAS 0.1W ES6 Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 250MHz, 200MHz 100mW Surface Mount ES6 |
| Manufacturer Part | Toshiba Semiconductor and Storage |
| Part Number | Components Description | Manufacturer |
|---|---|---|
| #252MXPR-2535A | FILTER HELICAL 405MHZ TYPE 7HW | |
| #292KNAS-T1028Z | INDUCTOR ADJUST 100NH THRU HOLE 100nH Adjustable Inductor 35 @ 50MHz Radial |
|
| #458PT-1566=P3 | AUDIO TRANSFORMERS / SIGNAL TRAN | |
| #458PT-1720=P3 | RF TRANSFORMER 5T:2T:2T 5TERM. G | |
| #5HT-36020AS-360 | FILTER HELICAL 360MHZ TYPE 5HT | |
| #A915AY-100M=P3 | FIXED IND 10UH 1.49A 90 MOHM SMD 10µH Shielded Wirewound Inductor 1.49A 90 mOhm Max Nonstandard |
|
| #A916CY-3R3M=P3 | FIXED IND 3.3UH 3.52A 26 MOHM 3.3µH Shielded Inductor 3.52A 26 mOhm Max Nonstandard |
|
| #A921CY-680M=P3 | FIXED IND 68UH 730MA 324 MOHM 68µH Shielded Inductor 730mA 324 mOhm Max Nonstandard |
|
| #B952AS-H-100M=P3 | FIXED IND 10µH Shielded Wirewound Inductor 2.7A 44 mOhm Max Nonstandard |
